Electronic structure of Gd based transition metal antimonides GdTSb (T = Ni, Pt)
| Title | Electronic structure of Gd based transition metal antimonides GdTSb (T = Ni, Pt) |
| Publication Type | Conference Paper |
| Year of Publication | 2018 |
| Authors | Sahariya, J, Kumar, P, Bhamu, KC, Soni, A |
| Editor | Shekhawat, MS, Bhardwaj, S, Suthar, B |
| Conference Name | 2nd International Conference on Condensed Matter and Applied Physics (ICC-2017) |
| Date Published | NOV |
| Publisher | Govt Engn Coll Bikaner; DST; DAE BRNS |
| Conference Location | 2 Huntington Quadrangles, STE 1NO1, Melville, NY 11747-4501 USA |
| ISBN Number | 978-0-7354-1648-2 |
| Abstract | We report the electronic and magnetic properties of ternary GdNiSb and GdPtSb compounds with cubic MgAgAs type structure. The energy bands, density of states and atom specific magnetic moments of compounds have been computed using GGA+U approach. The calculations predict that GdNiSb is a small band gap semiconductor whereas GdPtSb is metallic in nature. |
| DOI | 10.1063/1.5033035 |
| Type of Journal (Indian or Foreign) | Indian |
Divison category:
Physical and Materials Chemistry
Add new comment