01123nas a2200193 4500008004100000020002200041245008500063210006900148260011200217520036700329100002200696700001900718700001800737700001500755700001800770700001600788700001400804856011100818 2018 eng d a978-0-7354-1648-200aElectronic structure of Gd based transition metal antimonides GdTSb (T = Ni, Pt)0 aElectronic structure of Gd based transition metal antimonides Gd a2 Huntington Quadrangles, STE 1NO1, Melville, NY 11747-4501 USAbGovt Engn Coll Bikaner; DST; DAE BRNScNOV3 a
We report the electronic and magnetic properties of ternary GdNiSb and GdPtSb compounds with cubic MgAgAs type structure. The energy bands, density of states and atom specific magnetic moments of compounds have been computed using GGA+U approach. The calculations predict that GdNiSb is a small band gap semiconductor whereas GdPtSb is metallic in nature.
1 aSahariya, Jagrati1 aKumar, Pancham1 aBhamu, K., C.1 aSoni, Amit1 aShekhawat, MS1 aBhardwaj, S1 aSuthar, B uhttp://library.ncl.res.in/content/electronic-structure-gd-based-transition-metal-antimonides-gdtsb-t-ni-pt