Understanding the stability of an unprecedented Si-Be bond within quantum confinement

TitleUnderstanding the stability of an unprecedented Si-Be bond within quantum confinement
Publication TypeJournal Article
Year of Publication2023
AuthorsManeri, AHarun, Krishnamurty, S, Joshi, K
JournalACS Omega
Volume8
Issue16
Pagination14814-14822
Date PublishedAPR
Type of ArticleArticle
ISSN2470-1343
Abstract

As of today, the Si-Be bond remains underexplored in the literature, and therefore its anomalous behavior continues to be an unsolved puzzle to date. Therefore, the present study aims at evaluating the integrity of an unprecedented Si-Be bond within quantum confinement. To accomplish this, first-principles-based calculation are performed on Be-doped silicon clusters with atomic sizes 6, 7, and 10. Silicon clusters are sequentially doped with one, two, and three Be atoms, and their thermal response is registered in the temperature range of 200-1500 K, which discloses several research findings. During the course of the simulations, the clusters face various thermal events such as solid cluster phase, rapid structural metamorphosis, and fragmentation. Si-Be nanoalloy clusters are noted to be thermally stable at lower temperatures (200-700 K); however, they begins to disintegrate earlier at a temperature as low as 800 K. This lower stability is attributed to the weak nature of Si and Be heteroatomic interactions, which is corroborated from the structural and electronic property analysis of the doped clusters. In addition to this, the performance of Be-doped clusters at finite temperatures is also compared with the thermal response of two other popular systems, viz., C-and B-doped silicon clusters.

DOI10.1021/acsomega.3c01133
Type of Journal (Indian or Foreign)

Foreign

Impact Factor (IF)

4.132

Divison category: 
Physical and Materials Chemistry
Database: 
Web of Science (WoS)

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