Selenium-containing fused bicyclic heterocycle diselenolodiselenole: field effect transistorstudy and structure property relationship

TitleSelenium-containing fused bicyclic heterocycle diselenolodiselenole: field effect transistorstudy and structure property relationship
Publication TypeJournal Article
Year of Publication2016
AuthorsDebnath, S, Chithiravel, S, Sharma, S, Bedi, A, Krishnamoorthy, K, Zade, SS
JournalACS Applied Materials & Interfaces
Volume8
Issue25
Pagination18222-18230
Date PublishedJUL
AbstractThe first application of the diselenolodiselenole (C4Se4) heterocycle as an active organic field effect transistor materials is demonstrated here. C4Se4 derivatives (2a-2d) were obtained by using a newly developed straightforward diselenocyclization protocol, which includes the reaction of diynes with selenium powder at elevated temperature. C4Se4 derivatives exhibit strong donor characteristics and planar structure (except 2d). The atomic force microscopic analysis and thin-film X-ray diffraction pattern of compounds 2a-2d indicated the formation of distinct crystalline films that contain large domains. A scanning electron microscopy study of compound 2b showed development of symmetrical grains with an average diameter of 150 nm. Interestingly, 2b exhibited superior hole mobility, approaching 0.027 cm(2) V-1 s(-1) with a transconductance of 9.2 mu S. This study correlate the effect of p-stacking, Se center dot center dot center dot Se intermolecular interaction, and planarity with the charge transport properties and performance in the field effect transistor devices. We have shown that the planarity in C4Se4 derivatives was achieved by varying the end groups attached to the C4Se4 core. In turn, optoelectronic properties can also be tuned for all these derivatives by end-group variation.
DOI10.1021/acsami.6b02154
Type of Journal (Indian or Foreign)Foreign
Impact Factor (IF)7.145
Divison category: 
Polymer Science & Engineering

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