Role of oxygen vacancies and interstitials on structural phase transition, grain growth, and optical properties of Ga doped TiO2

TitleRole of oxygen vacancies and interstitials on structural phase transition, grain growth, and optical properties of Ga doped TiO2
Publication TypeJournal Article
Year of Publication2018
AuthorsKhatun, N, Tiwari, S, Vinod, CP, Tseng, C-M, Liu, SWei, Biring, S, Sen, S
JournalJournal of Applied Physics
Volume123
Issue24
PaginationArticle Number: 245702
Date PublishedJUN
AbstractA systematic study on the effect of gallium (Ga) doping (0 = 0.05), the effect of interstitials is compensated by both the effect of substitution and oxygen vacancies, thereby resulting in relatively lesser lattice expansion. Inhibition of the phase transition is the result of this lattice expansion. The crystallite size (anatase) and particle size (rutile) both are reduced due to Ga incorporation. It also modifies optical properties of pure TiO2 by increasing the bandgap (from 3.06 to 3.09 eV) and decreasing the Urbach energy (from 58.59 to 47.25 meV). This happens due to regularization of the lattice by the combined effect of substitution/ interstitials and oxygen vacancies. Published by AIP Publishing.
DOI10.1063/1.5027672
Type of Journal (Indian or Foreign)Foreign
Impact Factor (IF)2.068
Divison category: 
Catalysis and Inorganic Chemistry

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