Polycrystalline MnGe2 thin films on InAs(001) substrates

TitlePolycrystalline MnGe2 thin films on InAs(001) substrates
Publication TypeJournal Article
Year of Publication2018
AuthorsGutierrez-Naranjo, D, Holguin-Momaca, JT, Solis-Canto, OO, Gupta, P, Poddar, P, Magana, FEspinosa, Olive-Mendez, SF
JournalThin Solid Films
Volume657
Pagination38-41
Date PublishedJUL
Type of ArticleArticle
AbstractWe report on the growth of MnGe2 thin films on InAs(001) substrates using radio frequency-magnetron cosputtering. Polycrystalline thin films were obtained at a substrate temperature of 353 K. X-ray diffractometry was used to identify the tetragonal MnGe2 phase (space group 14/mcm). Measurements of the magnetic field and temperature dependence of the magnetization revealed that the MnGe2 thin films are ferromagnetic with a magnetization of 280 kAm(-1) and a Curie temperature of 62 K. Additionally, an antiferromagnetic component is observed at low temperatures, which may arise atomic disorder at the grain boundaries between MnGe2 crystallites.
DOI10.1016/j.tsf.2018.05.007
Type of Journal (Indian or Foreign)Foreign
Impact Factor (IF)1.879
Divison category: 
Physical and Materials Chemistry

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