High efficiency electron field emission from protruded graphene oxide nanosheets supported on sharp silicon nanowires

TitleHigh efficiency electron field emission from protruded graphene oxide nanosheets supported on sharp silicon nanowires
Publication TypeJournal Article
Year of Publication2013
AuthorsDevarapalli, RReddy, Kashid, RV, Deshmukh, AB, Sharma, P, Das, MR, More, MA, Shelke, MV
JournalJournal of Materials Chemistry C
Volume1
Issue33
Pagination5040-5046
Date PublishedJUN
ISSN2050-7526
Abstract

Graphene oxide (GO) potentially has applications in vacuum microelectronic devices for realization of field emission displays. Graphene and its derivatives are expected to be efficient field emitters due to their unique electrical properties. However, the flat sheet structure of graphene or GO allows electron field emission only from the edges of graphene and GO nanosheets. In order to extract maximum field emission current density at lower applied voltage from the GO nanosheets, we supported and stretched them on sharp tips of silicon nanowires (SiNWs). Highly efficient and stable field emission with low turn-on field was observed for these SiNW-GO heterostructures. The sharp protrusions created by stretching of the GO nanosheets on SiNWs locally enhance the electric field and thus enhance the field emission characteristics. The dominant use of silicon in electronic devices makes this approach robust for the development of field emission devices using graphene based field emitters.

DOI10.1039/c3tc30904e
Type of Journal (Indian or Foreign)

Foreign

Impact Factor (IF)

6.626

Divison category: 
Physical and Materials Chemistry