High charge carrier mobility in two dimensional indium (iii) isophthalic acid based frameworks

TitleHigh charge carrier mobility in two dimensional indium (iii) isophthalic acid based frameworks
Publication TypeJournal Article
Year of Publication2014
AuthorsPanda, T, Banerjee, R
JournalProceedings of the National Academy of Sciences India Section A-Physical Sciences
Volume84
Issue2
Pagination331-336
Date PublishedJUN
ISSN0369-8203
KeywordsCharge carrier mobility, Coordination chemistry, metal organic framework, pi-pi stacking
Abstract

The effect of dimensionality (1D to 2D) on charge carrier mobility have been studied thoroughly on three In(III)-isophthalate based MOFs [In-IA-1D, In-IA-2D-1 and -2]. In-IA-1D possess 1D nanotubular architecture with [(CH3)(2)NH2](+). In-IA-2D-1 have 2D layers containing only [(CH3)(2)NH2](+) cations. Whereas, In-IA-2D-2 have [(CH3)(2)NH2](+) cations as well as solvent DMF molecule inside the crystal structure. Due to presence of the pi-pi stacking arrangement among the phenyl rings of IA moieties facilitates the high charge carrier mobility (4.6 x 10(-3) cm(2) V-1 s(-1) at V-G = -40 V) in In-IA-2D-2. However, In-IA-1D and In-IA-2D-1 does not show any charge carrier mobility due to absence of pi-pi stacking arrangement.

DOI10.1007/s40010-014-0152-6
Type of Journal (Indian or Foreign)Indian
Impact Factor (IF)0.42
Divison category: 
Physical and Materials Chemistry