Field emission investigations of RuO2-doped SnO2 wires
| Title | Field emission investigations of RuO2-doped SnO2 wires |
| Publication Type | Journal Article |
| Year of Publication | 2007 |
| Authors | Bhise, AB, Late, DJ, Ramgir, NS, More, MA, Mulla, IS, Pillai, VK, Joag, DS |
| Journal | Applied Surface Science |
| Volume | 253 |
| Issue | 23 |
| Pagination | 9159-9163 |
| Date Published | SEP |
| Type of Article | Article |
| ISSN | 0169-4332 |
| Keywords | doped semiconductor, field emission, field enhancement factor, RuO2, SnO2 |
| Abstract | Field emission studies of a bunch and a single isolated RuO2:SnO2 wire have been performed. A current density of 5.73 x 10(4) A/cm(2) is drawn from the single wire emitter at an applied field of 8.46 x 10(4) V/mu m. Nonlinearity in the Fowler-Nordheim (F-N) plot has been observed and explained on the basis of electron emission from both the conduction and the valence bands of the semiconductor. The current stability recorded at the preset value of 1.5 LA is observed to be good. Overall the high emission current density, good stability and mechanically robust nature of the RuO2:SnO2 wires offer advantages as field emitters for many potential applications. (c) 2007 Elsevier B.V. All rights reserved. |
| DOI | 10.1016/j.apsusc.2007.05.058 |
| Type of Journal (Indian or Foreign) | Foreign |
| Impact Factor (IF) | 3.15 |
Divison category:
Physical and Materials Chemistry