We report herein the results of our investigations on the synthesis of transition-metal dichalcogenide (TMDC) semiconductor layered materials of MoS2, WS2, MoSe2, and WSe2 by the rapid quenching method. The bulk powders were added to deionized water in a polypropylene tube and subsequently flushed with argon gas. Thirty rapid freezing (30 s in a liquid nitrogen bath) and heating (20 min in an oil bath at 60 degrees C) cycles were then carried out. The reaction product was obtained in a yield in excess of 60 wt.-%, which indicates that the method can be utilized on an industrial scale for the production of 2D nanosheets. The as-synthesized products were then characterized by TEM, which revealed nanosheet-like morphologies. Raman spectroscopy confirmed the high quality of the nanosheet samples. The exfoliated samples also showed good electrochemical performance. Of the TMDC samples investigated, the WSe2 nanosheets were found to give the best performance due to their uniform morphology, large surface area, and fewest number of defects.

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