Enhancement in the field emission behavior of graphene in N-2/O-2 high vacuum ambience

TitleEnhancement in the field emission behavior of graphene in N-2/O-2 high vacuum ambience
Publication TypeConference Paper
Year of Publication2014
AuthorsSuryawanshi, SR, Kolhe, PS, Gavhane, DS, Patil, SS, Chavan, PG, More, MA, Late, DJ
EditorTsujino, S, Gobrecht, J, Paraliev, M, Braun, HH, Groening, O, Feurer, T
Conference Name2014 27th International Vacuum Nanoelectronics Conference (IVNC)
Date PublishedJUL
PublisherIEEE, 345 E 47th ST, New York, NY 10017 USA
Conference LocationEngelberg, Switzerland
ISBN Number978-1-4799-5306-6
Keywordsgraphene, Pressure Dependent Field Emission
Abstract

Herein we report, pressure dependent field emission (FE) behaviour of a few-layer graphene emitter. Gas dependent FE properties have been investigated in ultra high vacuum (UHV), as well as in N-2 and O-2 ambience at base pressure similar to 1x10(-6) torr. Interestingly, the graphene emitter when operated in N-2/O-2 ambience exhibits lower turn-on field and higher emission current density, as compared to the UHV conditions. The emission current stability investigated at preset value of similar to 1 mu A over the period of more than 2 hrs is found better in the N2 ambience and is characterized by fewer fluctuations, in contrast to the behaviour in the O-2 ambience. The observed enhanced electron emission behavior in N-2/O-2 ambience is attributed to modulation of the work function of graphene emitter.

DOI10.1109/IVNC.2014.6894791
Impact Factor (IF)

 

Divison category: 
Physical and Materials Chemistry