Electronic structure and properties of layered gallium telluride

TitleElectronic structure and properties of layered gallium telluride
Publication TypeJournal Article
Year of Publication2016
AuthorsU. Shenoy, S, Gupta, U, Narang, DS, Late, DJ, Waghmare, UV, Rao, CNR
JournalChemical Physics Letters
Volume651
Pagination148-154
Date PublishedMAY
ISSN0009-2614
Abstract

Layer-dependent electronic structure and properties of gallium monochalcogenides, GaX where X=S, Se, Te, have been investigated using first-principles calculations based on various functionals, with a motivation to assess their use in photocatalytic water splitting. Since hydrogen evolution by water splitting using visible light provides a promising way for solar energy conversion, both theoretical and experimental studies have been carried out on the photochemical hydrogen evolution by GaTe. We also present the Raman spectra of GaTe examined by both theory and experiment. (C) 2016 Elsevier B.V. All rights reserved.

DOI10.1016/j.cplett.2016.03.045
Type of Journal (Indian or Foreign)

Foreign

Impact Factor (IF)1.86
Divison category: 
Physical and Materials Chemistry