Band-like transport in high mobility unencapsulated single-layer MoS2 transistors
| Title | Band-like transport in high mobility unencapsulated single-layer MoS2 transistors |
| Publication Type | Journal Article |
| Year of Publication | 2013 |
| Authors | Jariwala, D, Sangwan, VK, Late, DJ, Johns, JE, Dravid, VP, Marks, TJ, Lauhon, LJ, Hersam, MC |
| Journal | Applied Physics Letters |
| Volume | 102 |
| Issue | 17 |
| Pagination | Article Number: 173107 |
| Date Published | APR |
| Abstract | Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm(2)/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low level of extrinsic contamination. While charge transport in the sub-threshold regime is consistent with a variable range hopping model, monotonically decreasing field-effect mobility with increasing temperature suggests band-like transport in the linear regime. At temperatures below 100 K, temperature-independent mobility is limited by Coulomb scattering, whereas, at temperatures above 100 K, phonon-limited mobility decreases as a power law with increasing temperature. (C) 2013 AIP Publishing LLC. |
| DOI | 10.1063/1.4803920 |
| Type of Journal (Indian or Foreign) | Foreign |
| Impact Factor (IF) | 3.142 |
Divison category:
Physical and Materials Chemistry