Band-like transport in high mobility unencapsulated single-layer MoS2 transistors

TitleBand-like transport in high mobility unencapsulated single-layer MoS2 transistors
Publication TypeJournal Article
Year of Publication2013
AuthorsJariwala, D, Sangwan, VK, Late, DJ, Johns, JE, Dravid, VP, Marks, TJ, Lauhon, LJ, Hersam, MC
JournalApplied Physics Letters
PaginationArticle Number: 173107
Date PublishedAPR
AbstractUltra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm(2)/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low level of extrinsic contamination. While charge transport in the sub-threshold regime is consistent with a variable range hopping model, monotonically decreasing field-effect mobility with increasing temperature suggests band-like transport in the linear regime. At temperatures below 100 K, temperature-independent mobility is limited by Coulomb scattering, whereas, at temperatures above 100 K, phonon-limited mobility decreases as a power law with increasing temperature. (C) 2013 AIP Publishing LLC.
Type of Journal (Indian or Foreign)Foreign
Impact Factor (IF)3.142
Divison category: 
Physical and Materials Chemistry