Back-to-back MOS–Schottky (Pt–SiO2–Si–C–Pt) nano-heterojunction device as an efficient self-powered photodetector: one step fabrication by pulsed laser deposition
| Title | Back-to-back MOS–Schottky (Pt–SiO2–Si–C–Pt) nano-heterojunction device as an efficient self-powered photodetector: one step fabrication by pulsed laser deposition |
| Publication Type | Journal Article |
| Year of Publication | 2014 |
| Authors | Shaikh, PA, Thakare, VP, Late, DJ, Ogale, S |
| Journal | Nanoscale |
| Volume | 6 |
| Issue | 7 |
| Pagination | 3550-3556 |
| Date Published | JAN |
| Type of Article | Article |
| ISSN | 2040-3372 |
| Abstract | An efficient self-powered photodetector design involving a C–Si hetero-interface with back-to-back MOS–Schottky (Pt–SiO2–Si–C–Pt) device action is presented. Pulsed laser deposition of a carbon thin film is used which dynamically removes the native surface oxide to form the desired Schottky interface. The combined device action yields two orders of magnitude photoresponse at zero bias. |
| DOI | 10.1039/C3NR06525A |
| Type of Journal (Indian or Foreign) | Foreign |
| Impact Factor (IF) | 7.233 |
Divison category:
Physical and Materials Chemistry
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