<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Kumar, Atul</style></author><author><style face="normal" font="default" size="100%">Pundle, Archana</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Effect of organic solvents on cell-bound penicillin V acylase activity of erwinia aroideae (DSMZ 30186): a permeabilization effect</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Molecular Catalysis B-Enzymatic</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">dielectric constant</style></keyword><keyword><style  face="normal" font="default" size="100%">Erwinia aroideae</style></keyword><keyword><style  face="normal" font="default" size="100%">Hydrophobicity</style></keyword><keyword><style  face="normal" font="default" size="100%">Organic solvents</style></keyword><keyword><style  face="normal" font="default" size="100%">Penicillin V acylase</style></keyword><keyword><style  face="normal" font="default" size="100%">Permeabilization</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2009</style></year><pub-dates><date><style  face="normal" font="default" size="100%">MAY</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">1-4</style></number><publisher><style face="normal" font="default" size="100%">ELSEVIER SCIENCE BV</style></publisher><pub-location><style face="normal" font="default" size="100%">PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS</style></pub-location><volume><style face="normal" font="default" size="100%">57</style></volume><pages><style face="normal" font="default" size="100%">67-71</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Erwinia aroideae (DSMZ 30186) is a potential microbial culture to produce intracellular penicillin V acylase (PVA). The whole cell PVA activity was improved by permeabilization with various organic solvents. The cell-bound PVA activity showed an eightfold increase upon treatment with chloroform (5 mu L/mg(dry) (biomass)) for 10 min and diethyl ether (10 mu L/mg(dry) (biomass)) for 45 min. Hexane, toluene, ethyl acetate and dichloromethane enhanced the enzyme activity up to two-, six-, four- and two-fold, respectively; whereas, PVA activity declined drastically on permeabilization with acetone, pyridine and alcohols. The physicochemical properties of the organic solvents used for permeabilization were correlated with the change in activity. It was found that solvents with high hydrophobicity (log P &amp;gt; 0.68) and lower dielectric constant (&amp;lt; 9) were relatively effective in increasing PVA activity. These results allow systematic selection of suitable solvent for best performance. (c) 2008 Elsevier B.V. All rights reserved.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">1-4</style></issue><custom3><style face="normal" font="default" size="100%">&lt;p&gt;Foreign&lt;/p&gt;</style></custom3><custom4><style face="normal" font="default" size="100%">&lt;p&gt;2.330&lt;/p&gt;</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hankare, P. P.</style></author><author><style face="normal" font="default" size="100%">Patil, R. P.</style></author><author><style face="normal" font="default" size="100%">Sankpal, U. B.</style></author><author><style face="normal" font="default" size="100%">Jadhav, S. D.</style></author><author><style face="normal" font="default" size="100%">Mulla, Imtiaz S.</style></author><author><style face="normal" font="default" size="100%">Jadhav, K. M.</style></author><author><style face="normal" font="default" size="100%">Chougule, B. K.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Magnetic and dielectric properties of nanophase manganese-substituted lithium ferrite</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Magnetism and Magnetic Materials</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">dielectric constant</style></keyword><keyword><style  face="normal" font="default" size="100%">Ferrite</style></keyword><keyword><style  face="normal" font="default" size="100%">Magnetization</style></keyword><keyword><style  face="normal" font="default" size="100%">X-ray diffraction</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2009</style></year><pub-dates><date><style  face="normal" font="default" size="100%">OCT</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">19</style></number><publisher><style face="normal" font="default" size="100%">ELSEVIER SCIENCE BV</style></publisher><pub-location><style face="normal" font="default" size="100%">PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS</style></pub-location><volume><style face="normal" font="default" size="100%">321</style></volume><pages><style face="normal" font="default" size="100%">3270-3273</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Nanocrystalline manganese-substituted lithium ferrites viz. Li0.5Fe2.5-xMnxO4 (2.5 &amp;lt;= x &amp;gt;= 0) were prepared by sol-gel autocombustion method. X-ray diffraction analysis confirmed that as the concentration of manganese increases the cubic phase changes to the tetragonal phase. The variation of saturation magnetization was studied as a function of manganese content. All the compositions indicate that they are ferrimagnetic in nature. The dielectric constant, dielectric loss tangent and ac conductivity of all samples were measured at room temperature as a function of frequency. These parameters decrease with increase in frequency for all of the samples. The substitution of manganese plays an important role in changing the structural and magnetic properties of these ferrites. The compositional variation of dielectric constant and d.c. resistivity shows an inverse trend of variation with each other. (C) 2009 Elsevier B.V. All rights reserved.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">19</style></issue><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">1.689</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Sagar, S.</style></author><author><style face="normal" font="default" size="100%">Joy, Pattayil Alias</style></author><author><style face="normal" font="default" size="100%">Anantharaman, Maliemadom R.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Multiferroic behavior of gd based manganite</style></title><secondary-title><style face="normal" font="default" size="100%">Ferroelectrics</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">dielectric constant</style></keyword><keyword><style  face="normal" font="default" size="100%">manganite</style></keyword><keyword><style  face="normal" font="default" size="100%">Multiferroic</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2009</style></year><pub-dates><date><style  face="normal" font="default" size="100%">OCT</style></date></pub-dates></dates><publisher><style face="normal" font="default" size="100%">TAYLOR &amp; FRANCIS LTD</style></publisher><pub-location><style face="normal" font="default" size="100%">4 PARK SQUARE, MILTON PARK, ABINGDON OX14 4RN, OXON, ENGLAND</style></pub-location><volume><style face="normal" font="default" size="100%">392</style></volume><pages><style face="normal" font="default" size="100%">PII 917324971</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Here we report the multiferroic nature of charge ordered manganite Gd0.5Sr0.5MnO3 for the first time. The temperature variation of dielectric constant shows broad relaxor type ferroelectric transition at around 210K and magnetization measurements shows weak ferromagnetism at 50K. The dielectric peak is very close to charge ordering temperature which is an evidence of the link between electronic state and increase of dielectric response. Butterfly variation of capacitance with voltage confirms ferroelectric nature of the sample at room temperature.&lt;/p&gt;</style></abstract><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">0.511</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Laha, Pinaki</style></author><author><style face="normal" font="default" size="100%">Panda, A. B.</style></author><author><style face="normal" font="default" size="100%">Dahiwale, S.</style></author><author><style face="normal" font="default" size="100%">Date, Kalyani S.</style></author><author><style face="normal" font="default" size="100%">Patil, K. R.</style></author><author><style face="normal" font="default" size="100%">Barhai, P. K.</style></author><author><style face="normal" font="default" size="100%">Das, A. K.</style></author><author><style face="normal" font="default" size="100%">Banerjee, Indrani</style></author><author><style face="normal" font="default" size="100%">Mahapatra, S. K.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Effect of leakage current and dielectric constant on single and double layer oxides in MOS structure</style></title><secondary-title><style face="normal" font="default" size="100%">Thin Solid Films</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Al2O3</style></keyword><keyword><style  face="normal" font="default" size="100%">dielectric constant</style></keyword><keyword><style  face="normal" font="default" size="100%">Leakage current</style></keyword><keyword><style  face="normal" font="default" size="100%">MOS device</style></keyword><keyword><style  face="normal" font="default" size="100%">Poole-Frenkel emission</style></keyword><keyword><style  face="normal" font="default" size="100%">Schottky emission</style></keyword><keyword><style  face="normal" font="default" size="100%">TiO2</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2010</style></year><pub-dates><date><style  face="normal" font="default" size="100%">DEC</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">5, SI</style></number><publisher><style face="normal" font="default" size="100%">Amer Vacuum Soc, Adv Surface Engn Div</style></publisher><pub-location><style face="normal" font="default" size="100%">PO BOX 564, 1001 LAUSANNE, SWITZERLAND</style></pub-location><volume><style face="normal" font="default" size="100%">519</style></volume><pages><style face="normal" font="default" size="100%">1530-1535</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;MOS structure of Al/Al2O3/n-Si, Al/TiO2/n-Si and Al/Al2O3/TiO2/n-Si was obtained by deposition of Al2O3 and TiO2 on silicon substrate by RF Magnetron Sputtering system. The total thickness of the oxide layer similar to 40 +/- 5 nm in the MOS structure was kept constant. Samples were characterized by X-Ray diffraction (XRD). X-Ray photoelectron spectroscopy (XPS), Impedance analyzer and Current-voltage (J-V) characteristics. The variations in the dielectric constant and tan 8 of the MOS capacitor in the frequency range of 1000Hz-1MHz were measured by impedance analyzer. The variation in dielectric constant of the Al/Al2O3/TiO2/n-Si multilayer compared to single layer of Al/Al2O3/n-Si and Al/TiO2/n-Si is due to high probability of defects, lattice mismatch and interface interactions. The steep rise of Tan 6 values in the Al/Al2O3/TiO2/n-Si structure is due to the resonance effect of both Al2O3 and TiO2 layers. The leakage current mechanisms of MOS structures were extracted from Schottky coefficient and Poole-Frenkel coefficient. Theoretical values of Schottky coefficients (beta(SC)) and Poole-Frenkel coefficients (beta(PF)) for each sample were estimated using the real part of the dielectric constant. The experimental values were calculated from J-V characteristics and compared with theoretical values. The appropriate model has been proposed. It was found that Schottky and Poole-Frenkel mechanisms are applicable at low and high field respectively for all MOS structures. The combination of Al/Al2O3/TiO2/n-Si is found to be a promising structure with high dielectric constant and low leakage current suitable for MOS devices. (C) 2010 Elsevier B.V. All rights reserved.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">5</style></issue><notes><style face="normal" font="default" size="100%">37th International Conference on Metallurgical Coatings and Thin Films, San Diego, CA, APR 26-30, 2010</style></notes><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">1.909</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Kar, Rahul</style></author><author><style face="normal" font="default" size="100%">Pal, Sourav</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Effect of solvents having different dielectric constants on reactivity: a conceptual DFT approach</style></title><secondary-title><style face="normal" font="default" size="100%">International Journal of Quantum Chemistry</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">COSMO</style></keyword><keyword><style  face="normal" font="default" size="100%">DFT</style></keyword><keyword><style  face="normal" font="default" size="100%">dielectric constant</style></keyword><keyword><style  face="normal" font="default" size="100%">Reactivity descriptors</style></keyword><keyword><style  face="normal" font="default" size="100%">solvent effect</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2010</style></year><pub-dates><date><style  face="normal" font="default" size="100%">AUG</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">9</style></number><publisher><style face="normal" font="default" size="100%">WILEY-BLACKWELL</style></publisher><pub-location><style face="normal" font="default" size="100%">111 RIVER ST, HOBOKEN 07030-5774, NJ USA</style></pub-location><volume><style face="normal" font="default" size="100%">110</style></volume><pages><style face="normal" font="default" size="100%">1642-1647</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Conceptual density functional theory is exploited to understand the reactivity in a medium of solvents with increasing dielectric constants. Aprotic as well as protic solvents are used for this study. It is found that the global parameters, such as chemical potential and hardness, decrease from gas phase to solvent phase with increasing dielectric constant. However, it is observed that the Fukui functions of the reactive atoms increase significantly with the dielectric constants of the aprotic solvents while for the protic solvents the variation of the reactivity indices is insignificant. (C) 2009 Wiley Periodicals, Inc. Int J Quantum Chem 110: 1642-1647, 2010&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">9</style></issue><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">1.302</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Babrekar, Harshada A.</style></author><author><style face="normal" font="default" size="100%">Kulkarni, Naveen V.</style></author><author><style face="normal" font="default" size="100%">Jog, Jyoti Prakash</style></author><author><style face="normal" font="default" size="100%">Mathe, Vikas L.</style></author><author><style face="normal" font="default" size="100%">Bhoraskar, S. V.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Influence of filler size and morphology in controlling the thermal emissivity of aluminium/polymer composites for space applications</style></title><secondary-title><style face="normal" font="default" size="100%">Materials Science and Engineering B-Advanced Functional Solid-State Materials</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Camouflaging</style></keyword><keyword><style  face="normal" font="default" size="100%">Composite</style></keyword><keyword><style  face="normal" font="default" size="100%">dielectric constant</style></keyword><keyword><style  face="normal" font="default" size="100%">Infra-red</style></keyword><keyword><style  face="normal" font="default" size="100%">Thermal emissivity</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2010</style></year><pub-dates><date><style  face="normal" font="default" size="100%">APR</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">1-3, SI</style></number><publisher><style face="normal" font="default" size="100%">ELSEVIER SCIENCE BV</style></publisher><pub-location><style face="normal" font="default" size="100%">PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS</style></pub-location><volume><style face="normal" font="default" size="100%">168</style></volume><pages><style face="normal" font="default" size="100%">40-44</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The paper has addressed the problem of controlling the thermal emissivities from metal/polymer composites prepared by solution method. Aluminium is used as a filler and polystyrene as a polymer-matrix. Aluminium particles, with micrometer and nanometer dimensions having different morphologies, were employed. The values of emissivities were reduced when the coarse grains and flakes of aluminium were used as fillers, whereas, no significant change was observed when nano-aluminium was used in the composite. Dielectric dispersion for the composites was measured and the results are analysed in view of Fresnel relation. The differences in the values of dielectric constants, between the experimentally measured and those which can be predicted theoretically, are thought to arise from the interfacial polarization. (C) 2009 Elsevier B.V. All rights reserved.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">1-3</style></issue><notes><style face="normal" font="default" size="100%">Conference on Specialty Advanced Materials and Polymers for Aerospace and Defense and Applications (SAMPADA-2008), Mat Res Soc Singapore, Singapore, SINGAPORE, JUL 03-08, 2005</style></notes><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">1.560</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Babrekar, Harshada A.</style></author><author><style face="normal" font="default" size="100%">Jog, Jyoti Prakash</style></author><author><style face="normal" font="default" size="100%">Mathe, Vikas L.</style></author><author><style face="normal" font="default" size="100%">Avasthi, D. K.</style></author><author><style face="normal" font="default" size="100%">Ojha, S.</style></author><author><style face="normal" font="default" size="100%">Bhoraskar, S. V.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Swift heavy ion induced formation of Al/polymer composite layer for low thermal emissivity in the IR range</style></title><secondary-title><style face="normal" font="default" size="100%">Nuclear Instruments &amp; Methods in Physics Research Section B-Beam Interactions with Materials and Atoms</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">composites</style></keyword><keyword><style  face="normal" font="default" size="100%">dielectric constant</style></keyword><keyword><style  face="normal" font="default" size="100%">Swift heavy ion</style></keyword><keyword><style  face="normal" font="default" size="100%">Thermal emissivity</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2012</style></year><pub-dates><date><style  face="normal" font="default" size="100%">SEP</style></date></pub-dates></dates><publisher><style face="normal" font="default" size="100%">ELSEVIER SCIENCE BV</style></publisher><pub-location><style face="normal" font="default" size="100%">PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS</style></pub-location><volume><style face="normal" font="default" size="100%">287</style></volume><pages><style face="normal" font="default" size="100%">135-140</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Composites of polymers with aluminium were formed by swift high energy ions of 150 MeV, which are used as low thermal emissivity materials for infrared wavelengths between 8-14 mu m. Emissivity and dielectric constants were studied for these structures. A semi-empirical model has been established to obtain the relation between emissivity and dielectric constant. (C) 2012 Elsevier B.V. All rights reserved.&lt;/p&gt;</style></abstract><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">1.266
</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Chaware, Varsha</style></author><author><style face="normal" font="default" size="100%">Deshmukh, Ravindra</style></author><author><style face="normal" font="default" size="100%">Sarode, Chetan</style></author><author><style face="normal" font="default" size="100%">Gokhale, Suresh</style></author><author><style face="normal" font="default" size="100%">Phatak, Girish</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Low-temperature sintering and microwave dielectric properties of Zn2SiO4 ceramic added with crystalline zinc borate</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Electronic Materials</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">dielectric constant</style></keyword><keyword><style  face="normal" font="default" size="100%">LTCC</style></keyword><keyword><style  face="normal" font="default" size="100%">quality factor</style></keyword><keyword><style  face="normal" font="default" size="100%">sintering density</style></keyword><keyword><style  face="normal" font="default" size="100%">zinc borate</style></keyword><keyword><style  face="normal" font="default" size="100%">zinc silicate</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2015</style></year><pub-dates><date><style  face="normal" font="default" size="100%">JUL</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">7</style></number><publisher><style face="normal" font="default" size="100%">SPRINGER</style></publisher><pub-location><style face="normal" font="default" size="100%">233 SPRING ST, NEW YORK, NY 10013 USA</style></pub-location><volume><style face="normal" font="default" size="100%">44</style></volume><pages><style face="normal" font="default" size="100%">2312-2320</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The physical and dielectric properties of composites of known microwave materials, Zn2SiO4 and Zn3B2O6, prepared by solid-state reaction, were investigated with the purpose of developing a low-loss dielectric material for low-temperature co-fired ceramic applications. An off-stoichiometric phase of Zn2SiO4 with extra SiO2 was used to avoid the occurrence of unreacted ZnO. During sintering, zinc borate was found to partially react with residual SiO2 to form Zn2SiO4. The residual zinc borate was converted to a boron-rich glassy phase which helped to reduce the sintering temperature of the composite. Good relative sintering density (&amp;gt; 90%) at temperatures below the melting temperature of zinc borate is indicative of a sintering mechanism of diffusion-based mass transfer. Composites containing 15 wt.% zinc borate, 2.5 wt.% lithium carbonate and 20 wt.% zinc borate in zinc silicate had dielectric constants of 6.8 and 6.1, quality factors (Qxf) of 48,800 and 94,300 GHz when sintered at 900A degrees C and 950A degrees C, respectively. These quality factor results are close to the best values reported for zinc silicate at these sintering temperatures.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">7</style></issue><custom3><style face="normal" font="default" size="100%">&lt;p&gt;Foreign&lt;/p&gt;</style></custom3><custom4><style face="normal" font="default" size="100%">1.491</style></custom4></record></records></xml>