<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Bogle, Kashinath A.</style></author><author><style face="normal" font="default" size="100%">Gokhale, Suresh P.</style></author><author><style face="normal" font="default" size="100%">Bhoraskar, Vasant N.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Surface disorder in c-Si induced by swift heavy ions</style></title><secondary-title><style face="normal" font="default" size="100%">Radiation Effects and Defects in Solids</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">AFM</style></keyword><keyword><style  face="normal" font="default" size="100%">crystalline silicon</style></keyword><keyword><style  face="normal" font="default" size="100%">ion irradiation</style></keyword><keyword><style  face="normal" font="default" size="100%">optical and X-ray reflectivity</style></keyword><keyword><style  face="normal" font="default" size="100%">Raman</style></keyword><keyword><style  face="normal" font="default" size="100%">XRD</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2005</style></year><pub-dates><date><style  face="normal" font="default" size="100%">JUN</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">6</style></number><publisher><style face="normal" font="default" size="100%">TAYLOR &amp; FRANCIS LTD</style></publisher><pub-location><style face="normal" font="default" size="100%">4 PARK SQUARE, MILTON PARK, ABINGDON OX14 4RN, OXON, ENGLAND</style></pub-location><volume><style face="normal" font="default" size="100%">160</style></volume><pages><style face="normal" font="default" size="100%">207-218</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The disorders induced in crystalline silicon (c-Si) through the process of electronic energy loss in the swift heavy ion irradiation were investigated. A number of silicon &amp;lt;100&amp;gt; samples were irradiated with 65 MeV oxygen ions at different fluences, 1x10(13) to 1.5x10(14) ions/cm(2), and characterized by the Raman spectroscopy, the optical reflectivity, the X-ray reflectivity, the atomic force microscopy (AFM) and the X-ray diffraction (XRD) techniques. The intensity, redshift, phonon coherence length and asymmetric broadening associated with the Raman peaks reveal that stressed and disordered lattice zones are produced in the surface region of the irradiated silicon. The average crystallite size, obtained by analyzing Raman spectrum with the phonon confinement model, was very large in the virgin silicon but decreased to &amp;lt;100 nm dimension in the ion irradiated silicon. The results of the X-ray reflectivity, AFM and optical reflectivity of 200-700 nm radiation indicate that the roughness of the silicon surface has enhanced substantially after ion irradiation. The diffusion of oxygen in silicon surface during ion irradiation is evident from the oscillation in the X-ray reflectivity spectrum and the sharp decrease in the reflectivity of 200-400 nm radiation. The rise in temperature, estimated from the heat spike model, was high enough to melt the local silicon surface. The results of XRD indicate that lattice defects have been induced and a new plane &amp;lt;211&amp;gt; has been formed in the silicon &amp;lt;100&amp;gt; after ion irradiation. The results of the present study show that the energy deposited in crystalline silicon through the process of electronic energy loss similar to 0.944 keV/nm per ion is sufficient to induce disorders of appreciable magnitude in the silicon surface even at a fluence of similar to 10(13) ions/cm(2).&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">6</style></issue><custom3><style face="normal" font="default" size="100%">&lt;p&gt;Foreign&lt;/p&gt;</style></custom3><custom4><style face="normal" font="default" size="100%">0.472</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Saikiran, V.</style></author><author><style face="normal" font="default" size="100%">Pathak, A. P.</style></author><author><style face="normal" font="default" size="100%">Rao, N. Srinivasa</style></author><author><style face="normal" font="default" size="100%">Devaraju, G.</style></author><author><style face="normal" font="default" size="100%">Debgupta, Joyashish</style></author><author><style face="normal" font="default" size="100%">Kyriakou, I.</style></author><author><style face="normal" font="default" size="100%">Emfietzoglou, D.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">SHI irradiation induced effects in functionalized MWCNTs</style></title><secondary-title><style face="normal" font="default" size="100%">Radiation Effects and Defects in Solids</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">CNT</style></keyword><keyword><style  face="normal" font="default" size="100%">Raman</style></keyword><keyword><style  face="normal" font="default" size="100%">SHI</style></keyword><keyword><style  face="normal" font="default" size="100%">TEM</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2012</style></year><pub-dates><date><style  face="normal" font="default" size="100%">FEB</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">8, SI</style></number><publisher><style face="normal" font="default" size="100%">TAYLOR &amp; FRANCIS LTD</style></publisher><pub-location><style face="normal" font="default" size="100%">4 PARK SQUARE, MILTON PARK, ABINGDON OX14 4RN, OXON, ENGLAND</style></pub-location><volume><style face="normal" font="default" size="100%">167</style></volume><pages><style face="normal" font="default" size="100%">569-576</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Multi-walled carbon nanotubes (MWCNTs) have attracted extensive attention globally due to their applications in modern nanotechnology. It is very important to study the effects on these MWCNTs under swift heavy ion (SHI) irradiation since ion irradiation has been recognized as one of the best tools for nanostructuring of materials, in general. Here, we present the effects of 80MeV Ni ions with a fluence ranging from 3 x 10(12) to 3 x 10(13) ions/cm(2) on functionalized MWCNT mats. The properties of pristine and irradiated samples were studied using X-ray diffraction, Raman spectroscopy and transmission electron microscopy. The effects of SHI irradiation on these samples are discussed in detail.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">8</style></issue><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">0.502
</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Harpale, Kashmira</style></author><author><style face="normal" font="default" size="100%">Bansode, Sanjeewani</style></author><author><style face="normal" font="default" size="100%">More, Mahendra</style></author><author><style face="normal" font="default" size="100%">Late, D. J.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Field emission investigation of composites of polypyrrole with graphene oxide, reduced graphene oxide and graphene nanoribbons</style></title><secondary-title><style face="normal" font="default" size="100%">2016 29th International Vacuum Nanoelectronics Conference (IVNC)</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">field emission</style></keyword><keyword><style  face="normal" font="default" size="100%">FTIR</style></keyword><keyword><style  face="normal" font="default" size="100%">polypyrrole</style></keyword><keyword><style  face="normal" font="default" size="100%">Raman</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2016</style></year><pub-dates><date><style  face="normal" font="default" size="100%">JUL</style></date></pub-dates></dates><publisher><style face="normal" font="default" size="100%">IEEE; IEEE Electron Devices Soc; ZEISS; Modern Electron; Amer Vacuum Soci; Paul Scherrer Inst; Elect &amp; Comp Engn; Univ British Columbia, Peter Wall Inst Adv Studies; Dept Elect &amp; Comp Engn</style></publisher><pub-location><style face="normal" font="default" size="100%">345 E 47th St, New York,NY 10017 USA</style></pub-location><isbn><style face="normal" font="default" size="100%">978-1-5090-2419-3</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The monomer pyrrole has been polymerized by chemical route in the presence of graphene oxide (GO), reduced graphene oxide (rGO) and graphene nanoribbons (GNR) separately to prepare nanocomposites as Polypyrrole-GO (PGO), PPy-rGO (PRGO), PPy-GNR (PGNR), respectively. The morphological, chemical and structural characterization of the as-synthesized products was carried out using scanning electron microscopy (SEM), Raman and fourier transform infrared (FTIR) spectroscopy. Field emission (FE) studies of PGO, PRGO, PGNR emitters were performed at the base pressure of 1x10(-8) mbar in planar `diode' configuration. Onset and threshold field values corresponding to emission current densities of 1 and 100 mu A/cm(2) are observed to be 1.5 and 2.3V/mu m for PGO, 1.4 and 2.2 V/mu m for PRGO and lowest for PGNR as 0.9 and 1.2V/mu m, respectively. The maximum emission current density of 2.5 mA/cm(2) drawn for PGO at the applied electric field of 3.2V/mu m, 1.2 mA/cm(2) at 3.6V/mu m from the PRGO and 8 mA/cm(2) at the field of 2.2 V/mu m from the PGNR emitters. An emission current versus time (I-t) plot shows stable emission behavior for the preset current values.&lt;/p&gt;</style></abstract><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3></record></records></xml>