<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Chavan, Padmakar G.</style></author><author><style face="normal" font="default" size="100%">More, Mahendra A.</style></author><author><style face="normal" font="default" size="100%">Joag, Dilip S.</style></author><author><style face="normal" font="default" size="100%">Badadhe, Satish S.</style></author><author><style face="normal" font="default" size="100%">Mulla, Imtiaz S.</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Tsujino, S.</style></author><author><style face="normal" font="default" size="100%">Gobrecht, J.</style></author><author><style face="normal" font="default" size="100%">Paraliev, M.</style></author><author><style face="normal" font="default" size="100%">Braun, H. H.</style></author><author><style face="normal" font="default" size="100%">Groening, O.</style></author><author><style face="normal" font="default" size="100%">Feurer, T.</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Photo-enhanced field emission studies of tapered CdS nanobelts</style></title><secondary-title><style face="normal" font="default" size="100%">2014 27th International Vacuum Nanoelectronics Conference (IVNC) </style></secondary-title><tertiary-title><style face="normal" font="default" size="100%">International Vacuum Nanoelectronics Conference</style></tertiary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Current stability</style></keyword><keyword><style  face="normal" font="default" size="100%">field emission</style></keyword><keyword><style  face="normal" font="default" size="100%">Nanobelts</style></keyword><keyword><style  face="normal" font="default" size="100%">Photoswitching</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2014</style></year><pub-dates><date><style  face="normal" font="default" size="100%">JUL</style></date></pub-dates></dates><publisher><style face="normal" font="default" size="100%">Paul Scherrer Inst; EMPA, Mat Sci &amp; Technol; Swiss Nanoscience Inst; Appl MicroSWISS; Amer Elements; Amer Vacuum Soc; IEEE, Electron Devices Soc</style></publisher><pub-location><style face="normal" font="default" size="100%">345 E 47th St, New York, NY 10017 USA</style></pub-location><isbn><style face="normal" font="default" size="100%">978-1-4799-5306-6</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Field emission and photo-enhanced field emission characteristics of single crystalline tapered CdS nanobelts have been investigated. The turn-on field for the emission current density of similar to 0.1 mu A/cm(2) is found to be similar to 2.1 V/mu m, which is much lower than reported values for various CdS nanostructures. The photo-enhanced field emission current shows a reproducible photo-switching behavior with rise in current level nearly four times that of its initial preset value (similar to 1 mu A) which is found to be very remarkable. Possible mechanism of photo-enhanced field emission is discussed.&lt;/p&gt;</style></abstract><notes><style face="normal" font="default" size="100%">27th International Vacuum Nanoelectronics Conference (IVNC), Engelberg, SWITZERLAND, JUL 06-10, 2014</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Krishnan, Nikhil</style></author><author><style face="normal" font="default" size="100%">Mukherjee, Shatabdi Porel</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Flexible V2O5-x nanobelts as SERS tweezers: defect engineering for remarkably sensitive and selective detection</style></title><secondary-title><style face="normal" font="default" size="100%">ACS Applied Nano Materials</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">defect engineering</style></keyword><keyword><style  face="normal" font="default" size="100%">Nanobelts</style></keyword><keyword><style  face="normal" font="default" size="100%">sensing</style></keyword><keyword><style  face="normal" font="default" size="100%">SERS</style></keyword><keyword><style  face="normal" font="default" size="100%">V2O5-x</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2026</style></year><pub-dates><date><style  face="normal" font="default" size="100%">MAY</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">9</style></volume><pages><style face="normal" font="default" size="100%">8733-8748</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;
	Transition metal oxide (TMO)-based semiconductor nanomaterials (NMs) have been progressively explored as promising substrates for surface-enhanced Raman scattering (SERS). The design and synthesis of highly stable, extremely sensitive, exceptionally selective SERS substrates, solely based on defects engineered in TMO-based NMs, have gained significant interest. This work demonstrates a simple hydrothermal route to synthesize substoichiometric V2O5-x flexible nanobelts without the use of surfactants, stabilizing agents, reducing agents, or structure-directing agents. Furthermore, the V2O5-x nanobelts proved to be highly effective as a SERS substrate for the sensitive detection of methylene blue (MB), achieving a remarkable maximum enhancement factor of up to 6.75 &amp;amp; times; 10(9) and a detection limit as low as the picomolar level. This performance is the best among metal oxide semiconductors and is comparable to that of noble metals, even without the presence of a ``hot spot.'' Additionally, the V2O5-x nanobelts demonstrate excellent selectivity as a ``SERS Tweezer,'' enabling the precise detection of MB even in the presence of interfering analytes across binary, ternary, and quinary mixtures. Notably, V2O5-x nanobelts successfully detected melamine and ethephon for the first time using a TMO-based SERS substrate. In addition, the detection limit for SERS using a V2O5-x substrate reached 3 ppm of melamine in liquid milk. Thus, our results clearly demonstrate that metal oxide semiconductors can be transformed into cost-effective, SERS-active substrates through defect engineering. These engineered substrates exhibit high sensitivity, selectivity, stability, recyclability, and biocompatibility-comparable to or even surpassing those of noble metal nanomaterial-based SERS substrates. This advancement could enable their effective use in detecting contaminants in foods and food ingredients.&lt;/p&gt;
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	Foreign&lt;/p&gt;
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	5.5&lt;/p&gt;
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