<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Suryawanshi, S. R.</style></author><author><style face="normal" font="default" size="100%">Kolhe, Pankaj S.</style></author><author><style face="normal" font="default" size="100%">Gavhane, D. S.</style></author><author><style face="normal" font="default" size="100%">Patil, S. S.</style></author><author><style face="normal" font="default" size="100%">Chavan, P. G.</style></author><author><style face="normal" font="default" size="100%">More, Mahendra A.</style></author><author><style face="normal" font="default" size="100%">Late, Dattatray J.</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Tsujino, S.</style></author><author><style face="normal" font="default" size="100%">Gobrecht, J.</style></author><author><style face="normal" font="default" size="100%">Paraliev, M.</style></author><author><style face="normal" font="default" size="100%">Braun, H. H.</style></author><author><style face="normal" font="default" size="100%">Groening, O.</style></author><author><style face="normal" font="default" size="100%">Feurer, T.</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Enhancement in the field emission behavior of graphene in N-2/O-2 high vacuum ambience</style></title><secondary-title><style face="normal" font="default" size="100%">2014 27th International Vacuum Nanoelectronics Conference (IVNC) </style></secondary-title><tertiary-title><style face="normal" font="default" size="100%">International Vacuum Nanoelectronics Conference</style></tertiary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">graphene</style></keyword><keyword><style  face="normal" font="default" size="100%">Pressure Dependent Field Emission</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2014</style></year><pub-dates><date><style  face="normal" font="default" size="100%">JUL</style></date></pub-dates></dates><publisher><style face="normal" font="default" size="100%">IEEE, 345 E 47th ST, New York, NY 10017 USA</style></publisher><pub-location><style face="normal" font="default" size="100%">Engelberg, Switzerland</style></pub-location><isbn><style face="normal" font="default" size="100%">978-1-4799-5306-6</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Herein we report, pressure dependent field emission (FE) behaviour of a few-layer graphene emitter. Gas dependent FE properties have been investigated in ultra high vacuum (UHV), as well as in N-2 and O-2 ambience at base pressure similar to 1x10(-6) torr. Interestingly, the graphene emitter when operated in N-2/O-2 ambience exhibits lower turn-on field and higher emission current density, as compared to the UHV conditions. The emission current stability investigated at preset value of similar to 1 mu A over the period of more than 2 hrs is found better in the N2 ambience and is characterized by fewer fluctuations, in contrast to the behaviour in the O-2 ambience. The observed enhanced electron emission behavior in N-2/O-2 ambience is attributed to modulation of the work function of graphene emitter.&lt;/p&gt;</style></abstract><notes><style face="normal" font="default" size="100%">27th International Vacuum Nanoelectronics Conference (IVNC), Engelberg, SWITZERLAND, JUL 06-10, 2014</style></notes><custom4><style face="normal" font="default" size="100%">&lt;br&gt;&lt;p&gt;&amp;nbsp;&lt;/p&gt;</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Chavan, Padmakar G.</style></author><author><style face="normal" font="default" size="100%">More, Mahendra A.</style></author><author><style face="normal" font="default" size="100%">Joag, Dilip S.</style></author><author><style face="normal" font="default" size="100%">Badadhe, Satish S.</style></author><author><style face="normal" font="default" size="100%">Mulla, Imtiaz S.</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Tsujino, S.</style></author><author><style face="normal" font="default" size="100%">Gobrecht, J.</style></author><author><style face="normal" font="default" size="100%">Paraliev, M.</style></author><author><style face="normal" font="default" size="100%">Braun, H. H.</style></author><author><style face="normal" font="default" size="100%">Groening, O.</style></author><author><style face="normal" font="default" size="100%">Feurer, T.</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Photo-enhanced field emission studies of tapered CdS nanobelts</style></title><secondary-title><style face="normal" font="default" size="100%">2014 27th International Vacuum Nanoelectronics Conference (IVNC) </style></secondary-title><tertiary-title><style face="normal" font="default" size="100%">International Vacuum Nanoelectronics Conference</style></tertiary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Current stability</style></keyword><keyword><style  face="normal" font="default" size="100%">field emission</style></keyword><keyword><style  face="normal" font="default" size="100%">Nanobelts</style></keyword><keyword><style  face="normal" font="default" size="100%">Photoswitching</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2014</style></year><pub-dates><date><style  face="normal" font="default" size="100%">JUL</style></date></pub-dates></dates><publisher><style face="normal" font="default" size="100%">Paul Scherrer Inst; EMPA, Mat Sci &amp; Technol; Swiss Nanoscience Inst; Appl MicroSWISS; Amer Elements; Amer Vacuum Soc; IEEE, Electron Devices Soc</style></publisher><pub-location><style face="normal" font="default" size="100%">345 E 47th St, New York, NY 10017 USA</style></pub-location><isbn><style face="normal" font="default" size="100%">978-1-4799-5306-6</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Field emission and photo-enhanced field emission characteristics of single crystalline tapered CdS nanobelts have been investigated. The turn-on field for the emission current density of similar to 0.1 mu A/cm(2) is found to be similar to 2.1 V/mu m, which is much lower than reported values for various CdS nanostructures. The photo-enhanced field emission current shows a reproducible photo-switching behavior with rise in current level nearly four times that of its initial preset value (similar to 1 mu A) which is found to be very remarkable. Possible mechanism of photo-enhanced field emission is discussed.&lt;/p&gt;</style></abstract><notes><style face="normal" font="default" size="100%">27th International Vacuum Nanoelectronics Conference (IVNC), Engelberg, SWITZERLAND, JUL 06-10, 2014</style></notes></record></records></xml>