<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Rath, Arup Kumar</style></author><author><style face="normal" font="default" size="100%">Bernechea, Maria</style></author><author><style face="normal" font="default" size="100%">Martinez, Luis</style></author><author><style face="normal" font="default" size="100%">Konstantatos, Gerasimos</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Solution-processed heterojunction solar cells based on p-type PbS quantum dots and n-type Bi2S3 nanocrystals</style></title><secondary-title><style face="normal" font="default" size="100%">Advanced Materials</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2011</style></year><pub-dates><date><style  face="normal" font="default" size="100%">AUG</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">23</style></volume><pages><style face="normal" font="default" size="100%">3712–3717</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Bi2S3 nanocrystals are employed as an n-type, non-toxic, inorganic, solution-processed semiconductor in thin film solar cells. The first solution processed-inorganic p-n junction based on p-type PbS QDs and n-type Bi2S3 nanocrystals with both phases contributing to photocarrier generation is demonstrated. The reported devices show a power conversion efficiency of 1.6% for 860 nm PbS QDs and over 1% for 1300 nm PbS QDs.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">32</style></issue><custom2><style face="normal" font="default" size="100%">&lt;p&gt;Council of Scientific &amp;amp; Industrial Research (CSIR) - India&lt;/p&gt;</style></custom2><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">13.877
</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Rath, Arup Kumar</style></author><author><style face="normal" font="default" size="100%">Bernechea, Maria</style></author><author><style face="normal" font="default" size="100%">Martinez, Luis</style></author><author><style face="normal" font="default" size="100%">Pelayo Garcia de Arquer, F.</style></author><author><style face="normal" font="default" size="100%">Osmond, Johann</style></author><author><style face="normal" font="default" size="100%">Konstantatos, Gerasimos</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Solution-processed inorganic bulk nano-heterojunctions and their application to solar cells</style></title><secondary-title><style face="normal" font="default" size="100%">Nature Photonics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2012</style></year><pub-dates><date><style  face="normal" font="default" size="100%">JUL</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">6</style></volume><pages><style face="normal" font="default" size="100%">529–534</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;In the last decade, solution-processed quantum dot/nanocrystal solar cells have emerged as a very promising technology for third-generation thin-film photovoltaics because of their low cost and high energy-harnessing potential. Quantum dot solar cell architectures developed to date have relied on the use of bulk-like thin films of colloidal quantum dots. Here, we introduce the bulk nano-heterojunction concept for inorganic solution-processed semiconductors. This platform can be readily implemented by mixing different semiconductor nanocrystals in solution and allows for the development of optoelectronic nanocomposite materials with tailored optoelectronic properties. We present bulk nano-heterojunction solar cells based on n-type Bi2S3 nanocrystals and p-type PbS quantum dots, which demonstrate a more than a threefold improvement in device performance compared to their bilayer analogue, as a result of suppressed recombination.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">8</style></issue><custom2><style face="normal" font="default" size="100%">&lt;p&gt;Council of Scientific &amp;amp; Industrial Research (CSIR) - India&lt;/p&gt;</style></custom2><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">27.254
</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Stavrinadis, Alexandros</style></author><author><style face="normal" font="default" size="100%">Rath, Arup Kumar</style></author><author><style face="normal" font="default" size="100%">Pelayo Garcia de Arquer, F.</style></author><author><style face="normal" font="default" size="100%">Diedenhofen, Silke L.</style></author><author><style face="normal" font="default" size="100%">Magen, Cesar</style></author><author><style face="normal" font="default" size="100%">Martinez, Luis</style></author><author><style face="normal" font="default" size="100%">So, David</style></author><author><style face="normal" font="default" size="100%">Konstantatos, Gerasimos</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Heterovalent cation substitutional doping for quantum dot homojunctions</style></title><secondary-title><style face="normal" font="default" size="100%">Nature Communications</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2013</style></year><pub-dates><date><style  face="normal" font="default" size="100%">DEC</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">4</style></volume><pages><style face="normal" font="default" size="100%">Article number: 2981</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Colloidal quantum dots have emerged as a material platform for low-cost high-performance optoelectronics. At the heart of optoelectronic devices lies the formation of a junction, which requires the intimate contact of n-type and p-type semiconductors. Doping in bulk semiconductors has been largely deployed for many decades, yet electronically active doping in quantum dots has remained a challenge and the demonstration of robust functional optoelectronic devices had thus far been elusive. Here we report an optoelectronic device, a quantum dot homojunction solar cell, based on heterovalent cation substitution. We used PbS quantum dots as a reference material, which is a p-type semiconductor, and we employed Bi-doping to transform it into an n-type semiconductor. We then combined the two layers into a homojunction device operating as a solar cell robustly under ambient air conditions with power conversion efficiency of 2.7%.&lt;/p&gt;</style></abstract><custom2><style face="normal" font="default" size="100%">&lt;p&gt;Council of Scientific &amp;amp; Industrial Research (CSIR) - India&lt;/p&gt;</style></custom2><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">10.742
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