<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Surya, Sandeep G.</style></author><author><style face="normal" font="default" size="100%">Ashwath, B. S. Narayan</style></author><author><style face="normal" font="default" size="100%">Mishra, Sushma</style></author><author><style face="normal" font="default" size="100%">Karthik, A. R. B.</style></author><author><style face="normal" font="default" size="100%">Sastry, A. B.</style></author><author><style face="normal" font="default" size="100%">Bhagavatula L. V. Prasad</style></author><author><style face="normal" font="default" size="100%">Rangappa, Dinesh</style></author><author><style face="normal" font="default" size="100%">Rao, V. Ramgopal</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">H2S detection using low-cost SnO2 nano-particle Bi-layer OFETs</style></title><secondary-title><style face="normal" font="default" size="100%">Sensors and Actuators B-Chemical</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">bi-layer</style></keyword><keyword><style  face="normal" font="default" size="100%">H2S detection</style></keyword><keyword><style  face="normal" font="default" size="100%">Metal-oxide</style></keyword><keyword><style  face="normal" font="default" size="100%">OFETs</style></keyword><keyword><style  face="normal" font="default" size="100%">Sensor</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2016</style></year><pub-dates><date><style  face="normal" font="default" size="100%">NOV</style></date></pub-dates></dates><publisher><style face="normal" font="default" size="100%">ELSEVIER SCIENCE SA</style></publisher><pub-location><style face="normal" font="default" size="100%">PO BOX 564, 1001 LAUSANNE, SWITZERLAND</style></pub-location><volume><style face="normal" font="default" size="100%">235</style></volume><pages><style face="normal" font="default" size="100%">378-385</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;In this article, a unique platform with an organic field-effect transistor (OFET) integrated with metal oxide nanoparticles for sensing of H2S gas is presented. Metal oxide nanoparticles such as SnO2 and ZnO synthesized using herbal techniques were used in the fabrication of OFETs using a bi-layer technique. The as -synthesized nanoparticles were characterized by Field Effect Scanning Electron Microscopy (FESEM), X-ray diffraction (XRD) and UV-vis Spectroscopy (UV-vis) to establish the material properties. We showed that the SnO2 based OFETs displayed better response for H2S at room temperature (25 degrees C) compared to the OFETs fabricated with ZnO. The characterization of the sensors by using extracted electrical parameters like field-effect mobility ([1), On -Current (Ion), threshold voltage (VT) and saturation current (ID]) establish the fact that the SnO2 based OFETs detect H2S gas at room temperature. Plausible mechanisms explaining the H2S gas detection by bi-layer film were discussed. On the other hand, the sensitivity of these OFETs against other reducing gases was less. (C) 2016 Elsevier B.V. All rights reserved.&lt;/p&gt;</style></abstract><custom3><style face="normal" font="default" size="100%">&lt;p&gt;Foreign&lt;/p&gt;</style></custom3><custom4><style face="normal" font="default" size="100%">4.758</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Surya, S. G.</style></author><author><style face="normal" font="default" size="100%">Roy, S.</style></author><author><style face="normal" font="default" size="100%">Ganne, B. S. P.</style></author><author><style face="normal" font="default" size="100%">Pasam, D.</style></author><author><style face="normal" font="default" size="100%">Sastry, A. B.</style></author><author><style face="normal" font="default" size="100%">Bhagavatula L. V. Prasad</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">OFET based H2S gas sensing among reducing and mining gases using green synthesis SnO2</style></title><secondary-title><style face="normal" font="default" size="100%">2016 3rd International Conference on Emerging Electronics, ICEE 2016</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year><pub-dates><date><style  face="normal" font="default" size="100%">JAN</style></date></pub-dates></dates><publisher><style face="normal" font="default" size="100%">IEEE</style></publisher><pub-location><style face="normal" font="default" size="100%">Mumbai, India</style></pub-location><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this paper we present detection of H2S gas using an organic field effect transistor (OFET) based sensor. A low-cost green synthesis process for SnO2 nanoparticles and bi-layer approach for device fabrication have been adopted to come up with the sensor. With the help of multiparameteric analysis, selectivity towards H2S gas was proved among other reducing and mining gases. </style></abstract><custom3><style face="normal" font="default" size="100%">Indian</style></custom3></record></records></xml>