<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Gaikwad, A. B.</style></author><author><style face="normal" font="default" size="100%">Navale, SC</style></author><author><style face="normal" font="default" size="100%">Ravi, V</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">TiO2 ceramic varistor modified with tantalum and barium</style></title><secondary-title><style face="normal" font="default" size="100%">Materials Science and Engineering B-Solid State Materials for Advanced Technology</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Ceramics</style></keyword><keyword><style  face="normal" font="default" size="100%">Oxides</style></keyword><keyword><style  face="normal" font="default" size="100%">TiO2</style></keyword><keyword><style  face="normal" font="default" size="100%">varistor</style></keyword><keyword><style  face="normal" font="default" size="100%">X-ray diffraction</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2005</style></year><pub-dates><date><style  face="normal" font="default" size="100%">NOV</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">1</style></number><publisher><style face="normal" font="default" size="100%">ELSEVIER SCIENCE SA</style></publisher><pub-location><style face="normal" font="default" size="100%">PO BOX 564, 1001 LAUSANNE, SWITZERLAND</style></pub-location><volume><style face="normal" font="default" size="100%">123</style></volume><pages><style face="normal" font="default" size="100%">50-52</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The non-linear current (I)-voltage (V) characteristics of titanium dioxide doped with small quantities of tantalum and barium (99.9 TiO2 + 0.1 Ta and 99.4 TiO2 + 0.1 Ta + 0.5 Ba, all are in at.%) were investigated. These samples have the non-linear coefficient (alpha) values of (20-30) with high breakdown voltages (E-B similar to 400-700 V mm(-1)). The pentavalent tantalum acts as donor and increases the electronic conductivity. The higher electrical conductivity and decrease in the breakdown field strength with barium addition is attributed to higher density. The acceptor like surface states formed by barium ions segregate to grain boundaries due size misfit to thereby modifying the electrical barrier characteristics of grain boundaries. (c) 2005 Elsevier B.V. All rights reserved.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">1</style></issue><work-type><style face="normal" font="default" size="100%">Article</style></work-type><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">2.38</style></custom4></record></records></xml>