<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Dhage, S. R.</style></author><author><style face="normal" font="default" size="100%">Ravi, V.</style></author><author><style face="normal" font="default" size="100%">Yang, O. B.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Low voltage varistor ceramics based on SnO2</style></title><secondary-title><style face="normal" font="default" size="100%">Bulletin of Materials Science</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Chemical synthesis</style></keyword><keyword><style  face="normal" font="default" size="100%">electronic materials</style></keyword><keyword><style  face="normal" font="default" size="100%">Microstructure</style></keyword><keyword><style  face="normal" font="default" size="100%">tin oxide</style></keyword><keyword><style  face="normal" font="default" size="100%">X-ray diffraction</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2007</style></year><pub-dates><date><style  face="normal" font="default" size="100%">DEC</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">6</style></number><publisher><style face="normal" font="default" size="100%">SPRINGER</style></publisher><pub-location><style face="normal" font="default" size="100%">233 SPRING STREET, NEW YORK, NY 10013 USA</style></pub-location><volume><style face="normal" font="default" size="100%">30</style></volume><pages><style face="normal" font="default" size="100%">583-586</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The nonlinear current (I)-voltage (V) characteristics of tin dioxide doped with either Nb2O5 and CoO or Sb2O3 and CoO show promising values of nonlinear coefficient (alpha) values (similar to 11) with low breakdown voltages (E-B, similar to 40 V mm(-1)). The pentavalent antimony or niobium acts as donor and increases the electronic conductivity. The crucial parameter for obtaining low breakdown voltage is the grain size, which depends upon sintering duration and temperature of these oxide ceramics.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">6</style></issue><work-type><style face="normal" font="default" size="100%">Article</style></work-type><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">0.895</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Dhage, S. R.</style></author><author><style face="normal" font="default" size="100%">Ravi, V.</style></author><author><style face="normal" font="default" size="100%">Yang, O. B.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Varistor property of SnO2 center dot CoO center dot Ta2O5 ceramic modified by barium and strontium</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Alloys and Compounds</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Oxide materials</style></keyword><keyword><style  face="normal" font="default" size="100%">scanning electron microscopy</style></keyword><keyword><style  face="normal" font="default" size="100%">Sintering</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2008</style></year><pub-dates><date><style  face="normal" font="default" size="100%">OCT</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">1-2</style></number><publisher><style face="normal" font="default" size="100%">ELSEVIER SCIENCE SA</style></publisher><pub-location><style face="normal" font="default" size="100%">PO BOX 564, 1001 LAUSANNE, SWITZERLAND</style></pub-location><volume><style face="normal" font="default" size="100%">466</style></volume><pages><style face="normal" font="default" size="100%">483-487</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The influence of an alkali earth (Ba/Sr) element in small quantities (&amp;lt; 1 at.%) on non-linear electrical properties of 98.5% SnO2 + 1% CoO + 0.5% Ta2O5 (all in at.%) varistor system has been investigated. The non-linear coefficient increases from 33 to 52 whereas breakdown field strength varies 5025-6050 V cm(-1) for the barium-doped samples. In case of strontium-doped specimens moderate increase in non-linear coefficient but significant increase in breakdown field is observed. It is proposed that due to ionic size misfit, Ba and Sr segregates to grain boundaries thereby modifying their barrier properties. The contribution from grain boundary phase to the electrical property is confirmed by the impedance analysis. (C) 2007 Elsevier B.V. All rights reserved.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">1-2</style></issue><work-type><style face="normal" font="default" size="100%">Article</style></work-type><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">3.014</style></custom4></record></records></xml>