<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Dhage, S. R.</style></author><author><style face="normal" font="default" size="100%">Ravi, V.</style></author><author><style face="normal" font="default" size="100%">Yang, O. B.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Low voltage varistor ceramics based on SnO2</style></title><secondary-title><style face="normal" font="default" size="100%">Bulletin of Materials Science</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Chemical synthesis</style></keyword><keyword><style  face="normal" font="default" size="100%">electronic materials</style></keyword><keyword><style  face="normal" font="default" size="100%">Microstructure</style></keyword><keyword><style  face="normal" font="default" size="100%">tin oxide</style></keyword><keyword><style  face="normal" font="default" size="100%">X-ray diffraction</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2007</style></year><pub-dates><date><style  face="normal" font="default" size="100%">DEC</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">6</style></number><publisher><style face="normal" font="default" size="100%">SPRINGER</style></publisher><pub-location><style face="normal" font="default" size="100%">233 SPRING STREET, NEW YORK, NY 10013 USA</style></pub-location><volume><style face="normal" font="default" size="100%">30</style></volume><pages><style face="normal" font="default" size="100%">583-586</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The nonlinear current (I)-voltage (V) characteristics of tin dioxide doped with either Nb2O5 and CoO or Sb2O3 and CoO show promising values of nonlinear coefficient (alpha) values (similar to 11) with low breakdown voltages (E-B, similar to 40 V mm(-1)). The pentavalent antimony or niobium acts as donor and increases the electronic conductivity. The crucial parameter for obtaining low breakdown voltage is the grain size, which depends upon sintering duration and temperature of these oxide ceramics.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">6</style></issue><work-type><style face="normal" font="default" size="100%">Article</style></work-type><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">0.895</style></custom4></record></records></xml>