<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Bogle, Kashinath A.</style></author><author><style face="normal" font="default" size="100%">Bachhav, Mukesh N.</style></author><author><style face="normal" font="default" size="100%">Deo, Meenal S.</style></author><author><style face="normal" font="default" size="100%">Valanoor, Nagarajan</style></author><author><style face="normal" font="default" size="100%">Ogale, Satishchandra B.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Enhanced nonvolatile resistive switching in dilutely cobalt doped TiO2</style></title><secondary-title><style face="normal" font="default" size="100%">Applied Physics Letters</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">cobalt</style></keyword><keyword><style  face="normal" font="default" size="100%">Doping</style></keyword><keyword><style  face="normal" font="default" size="100%">magnetic switching</style></keyword><keyword><style  face="normal" font="default" size="100%">random-access storage</style></keyword><keyword><style  face="normal" font="default" size="100%">titanium compounds</style></keyword><keyword><style  face="normal" font="default" size="100%">vacancies (crystal)</style></keyword><keyword><style  face="normal" font="default" size="100%">valency</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2009</style></year><pub-dates><date><style  face="normal" font="default" size="100%">NOV</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">20</style></number><publisher><style face="normal" font="default" size="100%">AMER INST PHYSICS</style></publisher><pub-location><style face="normal" font="default" size="100%">CIRCULATION &amp; FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA</style></pub-location><volume><style face="normal" font="default" size="100%">95</style></volume><pages><style face="normal" font="default" size="100%">203502</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Incorporation of dilute concentration of dopant having a valence state different than that of the host cation enables controlled incorporation proximity vacancy defects for local charge balance. Since nonvolatile resistive switching is a phenomenon tied to such defects, it can be expected to be influenced by dilute doping. In this work, we demonstrate that enhanced nonvolatile resistive switching is realized in dilutely cobalt doped TiO2 films grown at room temperature. We provide essential characterizations and analyses. We suggest that the oxygen vacancies in the proximity of immobile dopants provide well distributed anchors for the development of systematic filamentary tracks.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">20</style></issue><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">3.820</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Chanmal, Chetan</style></author><author><style face="normal" font="default" size="100%">Deo, Meenal S.</style></author><author><style face="normal" font="default" size="100%">Jog, Jyoti Prakash</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Enhanced dielectric permittivity in poly (vinylidene) fluoride/multiwalled carbon nanotubes nanocomposite thin films fabricated by pulsed laser deposition</style></title><secondary-title><style face="normal" font="default" size="100%">Applied Surface Science</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Dielectric permittivity</style></keyword><keyword><style  face="normal" font="default" size="100%">Ferroelectric polymer</style></keyword><keyword><style  face="normal" font="default" size="100%">Percolation threshold</style></keyword><keyword><style  face="normal" font="default" size="100%">pulsed laser deposition</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin films</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2011</style></year><pub-dates><date><style  face="normal" font="default" size="100%">NOV</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">3</style></number><publisher><style face="normal" font="default" size="100%">ELSEVIER SCIENCE BV</style></publisher><pub-location><style face="normal" font="default" size="100%">PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS</style></pub-location><volume><style face="normal" font="default" size="100%">258</style></volume><pages><style face="normal" font="default" size="100%">1256-1260</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The fabrication of high quality thin films of poly (vinylidene fluoride) embedded with multiwalled carbon nanotubes using pulsed laser deposition technique is reported. The prepared films were characterized for structural, morphology and dielectric properties. The morphology analysis revealed uniform dispersion of multiwalled carbon nanotubes throughout the polymer matrix. X-ray diffraction results suggested that the poly (vinylidene fluoride) film is in amorphous phase while addition of multiwalled carbon nanotubes showed presence of crystalline peaks in the nanocomposites films. It was interesting to note that the nanocomposite films exhibits significant enhancement of the ferroelectric beta-phase as evidenced by the X-ray diffraction and Fourier transform infrared spectroscopy results. The dielectric analysis shows a remarkable enhancement in the dielectric permittivity of nanocomposites with lower loss and conductivity level. The results can be attributed to the formation of minicapacitor network and relatively higher percolation threshold in the nanocomposites. (C) 2011 Elsevier B.V. All rights reserved.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">3</style></issue><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">2.46
</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Chanmal, Chetan</style></author><author><style face="normal" font="default" size="100%">Deo, Meenal S.</style></author><author><style face="normal" font="default" size="100%">Rana, Abhimanyu</style></author><author><style face="normal" font="default" size="100%">Jog, Jyoti Prakash</style></author><author><style face="normal" font="default" size="100%">Ogale, Satishchandra B.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Strong electric field modulation of transport in PVDF/MWCNT nanocomposite near the percolation threshold</style></title><secondary-title><style face="normal" font="default" size="100%">Solid State Communications</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Field effect device</style></keyword><keyword><style  face="normal" font="default" size="100%">pulsed laser deposition</style></keyword><keyword><style  face="normal" font="default" size="100%">PVDF</style></keyword><keyword><style  face="normal" font="default" size="100%">Scanning tunneling microscopy</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2011</style></year><pub-dates><date><style  face="normal" font="default" size="100%">NOV</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">21</style></number><publisher><style face="normal" font="default" size="100%">PERGAMON-ELSEVIER SCIENCE LTD</style></publisher><pub-location><style face="normal" font="default" size="100%">THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND</style></pub-location><volume><style face="normal" font="default" size="100%">151</style></volume><pages><style face="normal" font="default" size="100%">1612-1615</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;A nanocomposite comprising of multiwalled carbon nanotubes (MWCNT) embedded in ferroelectric Poly(vinylidene fluoride) PVDF polymer matrix is examined for electric field induced transport modulation. The pulsed laser deposition (PLD) grown thin films of the nanocomposite with different MWCNT content were characterized. When used as a channel layer in a field effect transistor configuration, a strong electric field modulation of the transport was realized just below the percolation threshold. We believe that this nanocomposite non-percolating channel concept can provide several opportunities for FET devices for organic electronics. (C) 2011 Elsevier Ltd. All rights reserved.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">21</style></issue><work-type><style face="normal" font="default" size="100%">Article</style></work-type><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">1.649
</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Deo, Meenal S.</style></author><author><style face="normal" font="default" size="100%">Mujawar, Sarfraj</style></author><author><style face="normal" font="default" size="100%">Game, Onkar S.</style></author><author><style face="normal" font="default" size="100%">Yengantiwar, Ashish</style></author><author><style face="normal" font="default" size="100%">Banpurkar, Arun G.</style></author><author><style face="normal" font="default" size="100%">Kulkarni, Sneha</style></author><author><style face="normal" font="default" size="100%">Jog, Jyoti Prakash</style></author><author><style face="normal" font="default" size="100%">Ogale, Satishchandra B.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Strong photo-response in a flip-chip nanowire p-Cu2O/n-ZnO junction</style></title><secondary-title><style face="normal" font="default" size="100%">Nanoscale</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2011</style></year><pub-dates><date><style  face="normal" font="default" size="100%">OCT</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">11</style></number><publisher><style face="normal" font="default" size="100%">ROYAL SOC CHEMISTRY</style></publisher><pub-location><style face="normal" font="default" size="100%">THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND</style></pub-location><volume><style face="normal" font="default" size="100%">3</style></volume><pages><style face="normal" font="default" size="100%">4706-4712</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Cu2O nanoneedles are synthesized on a copper substrate by a simple anodization and reducing ambient annealing protocol. ZnO nanorods are grown on ITO coated glass by a low temperature chemical route. The electronic and photo-response properties of the p-Cu2O/n-ZnO flip-chip heterojunction are then studied and analyzed. We show that the I-V characteristic is rectifying and the junction exhibits a good photoresponse (similar to 120% under 1 V reverse bias) under AM 1.5 (1 Sun) illumination. This nano-heterojunction photo-response is far stronger as compared to that of a pulsed laser deposited thin film p-Cu2O/n-ZnO heterojunction, which can be attributed to higher junction area in the former case.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">11</style></issue><work-type><style face="normal" font="default" size="100%">Article</style></work-type><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">5.914
</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Suryawanshi, Sachin R.</style></author><author><style face="normal" font="default" size="100%">Singh, Anil K.</style></author><author><style face="normal" font="default" size="100%">Deo, Meenal S.</style></author><author><style face="normal" font="default" size="100%">Late, Dattatray J.</style></author><author><style face="normal" font="default" size="100%">Sinha, Sucharita</style></author><author><style face="normal" font="default" size="100%">More, Mahendra A.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">3D Hetero-architecture of GdB6 nanoparticles on lessened cubic Cu2O nanowires: enhanced field emission behaviour</style></title><secondary-title><style face="normal" font="default" size="100%">CrystEngComm</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2015</style></year><pub-dates><date><style  face="normal" font="default" size="100%">MAR</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">21</style></number><publisher><style face="normal" font="default" size="100%">ROYAL SOC CHEMISTRY</style></publisher><pub-location><style face="normal" font="default" size="100%">THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND</style></pub-location><volume><style face="normal" font="default" size="100%">17</style></volume><pages><style face="normal" font="default" size="100%">3936-3944</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The field emission properties (FE) of a heteroarchitecture comprised of gadolinium hexaboride nanoparticles uniformly decorated over Cu2O nanoneedles (GdB6/Cu2O) have been investigated at the base pressure of similar to 1 x 10(-8) mbar. Under the optimized pulsed laser deposition (PLD), a well-adhered coating of GdB6 nanoparticles on chemically synthesized cuprous oxide (Cu2O) nanoneedles has been obtained. A plausible growth mechanism of the hierarchical assembly of GdB6 nanoparticles on the Cu2O nanoneedles is explained on the basis of structural analysis carried out using SEM and TEM. A low turn-on field of similar to 2.3 V mu m(-1) (to draw an emission current density similar to 1 mu A cm(-2)) is observed along with stable emission current at the preset value of similar to 2 mu A over 4 h. The enhanced emission behaviour of the GdB6/Cu2O heteroarchitecture, in contrast to the pristine Cu2O nanoneedles, is attributed to its high aspect ratio and low work function. The observed FE results demonstrate GdB6/Cu2O heteroarchitecture as a potential candidate for application in various vacuum nano/microelectronic devices.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">21</style></issue><work-type><style face="normal" font="default" size="100%">Article</style></work-type><custom3><style face="normal" font="default" size="100%">&lt;p&gt;Foreign&lt;/p&gt;</style></custom3><custom4><style face="normal" font="default" size="100%">&lt;p&gt;3.849&lt;/p&gt;</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Gawli, Yogesh</style></author><author><style face="normal" font="default" size="100%">Banerjee, Abhik</style></author><author><style face="normal" font="default" size="100%">Dhakras, Dipti</style></author><author><style face="normal" font="default" size="100%">Deo, Meenal S.</style></author><author><style face="normal" font="default" size="100%">Bulani, Dinesh</style></author><author><style face="normal" font="default" size="100%">Wadgaonkar, Prakash P.</style></author><author><style face="normal" font="default" size="100%">Shelke, Manjusha</style></author><author><style face="normal" font="default" size="100%">Ogale, Satishchandra</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">3D Polyaniline architecture by concurrent inorganic and organic acid doping for superior and robust high rate supercapacitor performance</style></title><secondary-title><style face="normal" font="default" size="100%">Scientific Reports</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2016</style></year><pub-dates><date><style  face="normal" font="default" size="100%">FEB</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">6</style></volume><pages><style face="normal" font="default" size="100%">Article No. 21002</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><custom3><style face="normal" font="default" size="100%">&lt;p&gt;Foreign&lt;/p&gt;</style></custom3><custom4><style face="normal" font="default" size="100%">&lt;p&gt;5.228&lt;/p&gt;</style></custom4></record></records></xml>