<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Laha, Pinaki</style></author><author><style face="normal" font="default" size="100%">Panda, A. B.</style></author><author><style face="normal" font="default" size="100%">Dahiwale, S.</style></author><author><style face="normal" font="default" size="100%">Date, Kalyani S.</style></author><author><style face="normal" font="default" size="100%">Patil, K. R.</style></author><author><style face="normal" font="default" size="100%">Barhai, P. K.</style></author><author><style face="normal" font="default" size="100%">Das, A. K.</style></author><author><style face="normal" font="default" size="100%">Banerjee, Indrani</style></author><author><style face="normal" font="default" size="100%">Mahapatra, S. K.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Effect of leakage current and dielectric constant on single and double layer oxides in MOS structure</style></title><secondary-title><style face="normal" font="default" size="100%">Thin Solid Films</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Al2O3</style></keyword><keyword><style  face="normal" font="default" size="100%">dielectric constant</style></keyword><keyword><style  face="normal" font="default" size="100%">Leakage current</style></keyword><keyword><style  face="normal" font="default" size="100%">MOS device</style></keyword><keyword><style  face="normal" font="default" size="100%">Poole-Frenkel emission</style></keyword><keyword><style  face="normal" font="default" size="100%">Schottky emission</style></keyword><keyword><style  face="normal" font="default" size="100%">TiO2</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2010</style></year><pub-dates><date><style  face="normal" font="default" size="100%">DEC</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">5, SI</style></number><publisher><style face="normal" font="default" size="100%">Amer Vacuum Soc, Adv Surface Engn Div</style></publisher><pub-location><style face="normal" font="default" size="100%">PO BOX 564, 1001 LAUSANNE, SWITZERLAND</style></pub-location><volume><style face="normal" font="default" size="100%">519</style></volume><pages><style face="normal" font="default" size="100%">1530-1535</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;MOS structure of Al/Al2O3/n-Si, Al/TiO2/n-Si and Al/Al2O3/TiO2/n-Si was obtained by deposition of Al2O3 and TiO2 on silicon substrate by RF Magnetron Sputtering system. The total thickness of the oxide layer similar to 40 +/- 5 nm in the MOS structure was kept constant. Samples were characterized by X-Ray diffraction (XRD). X-Ray photoelectron spectroscopy (XPS), Impedance analyzer and Current-voltage (J-V) characteristics. The variations in the dielectric constant and tan 8 of the MOS capacitor in the frequency range of 1000Hz-1MHz were measured by impedance analyzer. The variation in dielectric constant of the Al/Al2O3/TiO2/n-Si multilayer compared to single layer of Al/Al2O3/n-Si and Al/TiO2/n-Si is due to high probability of defects, lattice mismatch and interface interactions. The steep rise of Tan 6 values in the Al/Al2O3/TiO2/n-Si structure is due to the resonance effect of both Al2O3 and TiO2 layers. The leakage current mechanisms of MOS structures were extracted from Schottky coefficient and Poole-Frenkel coefficient. Theoretical values of Schottky coefficients (beta(SC)) and Poole-Frenkel coefficients (beta(PF)) for each sample were estimated using the real part of the dielectric constant. The experimental values were calculated from J-V characteristics and compared with theoretical values. The appropriate model has been proposed. It was found that Schottky and Poole-Frenkel mechanisms are applicable at low and high field respectively for all MOS structures. The combination of Al/Al2O3/TiO2/n-Si is found to be a promising structure with high dielectric constant and low leakage current suitable for MOS devices. (C) 2010 Elsevier B.V. All rights reserved.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">5</style></issue><notes><style face="normal" font="default" size="100%">37th International Conference on Metallurgical Coatings and Thin Films, San Diego, CA, APR 26-30, 2010</style></notes><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">1.909</style></custom4></record></records></xml>