<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hankare, P. P.</style></author><author><style face="normal" font="default" size="100%">Rathod, K. C.</style></author><author><style face="normal" font="default" size="100%">Asabe, M. R.</style></author><author><style face="normal" font="default" size="100%">Jadhav, A. V.</style></author><author><style face="normal" font="default" size="100%">Helavi, V. B.</style></author><author><style face="normal" font="default" size="100%">Chavan, Santosh S.</style></author><author><style face="normal" font="default" size="100%">Garadkar, K. M.</style></author><author><style face="normal" font="default" size="100%">Mulla, Imtiaz S.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Photoelectrochemical applications of In2Se3 thin films by chemical deposition</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Materials Science-Materials in Electronics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2011</style></year><pub-dates><date><style  face="normal" font="default" size="100%">APR</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">4</style></number><publisher><style face="normal" font="default" size="100%">SPRINGER</style></publisher><pub-location><style face="normal" font="default" size="100%">VAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDS</style></pub-location><volume><style face="normal" font="default" size="100%">22</style></volume><pages><style face="normal" font="default" size="100%">359-364</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Indium selenide films have been synthesized by chemical bath deposition method onto stainless steel plate. The configuration of fabricated cell is n-In2Se3| NaOH(1 M) + S(1 M) + Na2S(1 M) |C-(graphite). Characterization of the photoelectrochemical cell was carried out by studying X-ray diffraction, current-voltage and capacitance-voltage characteristics in the dark, barrier height measurements, power output, photoresponse and spectral response. The study shows that the In2Se3 thin films are n-type semiconductor. The junction ideality factor was found to be 3.24. The flat band potential and the barrier height were found to be 0.720 V and 0.196 eV, respectively. From the study of power output characteristics, open circuit voltage, short circuit current, fill factor and efficiency were found to be 310 mV, 20 mu A, 37.64 and 0.61%, respectively. Photoresponse studies show that the lighted ideality factor is 2.78. Maximum current was observed at 575 nm.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">4</style></issue><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">1.52</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Kudale, A. S.</style></author><author><style face="normal" font="default" size="100%">Kamble, S. B.</style></author><author><style face="normal" font="default" size="100%">Gore, A. H.</style></author><author><style face="normal" font="default" size="100%">Pisal, M. M.</style></author><author><style face="normal" font="default" size="100%">Salokhe, A. T.</style></author><author><style face="normal" font="default" size="100%">Kolekar, G. B.</style></author><author><style face="normal" font="default" size="100%">Helavi, V. B.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">One-pot three-component synthesis and photophysical properties of highly fluorescent novel 4-alkyl-3-aryl-2,6-dicyanoanilines by using tris(hydroxymethyl)aminomethane as a catalyst</style></title><secondary-title><style face="normal" font="default" size="100%">Chemical Data Collections</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2019</style></year><pub-dates><date><style  face="normal" font="default" size="100%">FEB</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">19</style></volume><pages><style face="normal" font="default" size="100%">Article No: 100172</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Novel 4-alkyl-3-aryl-2,6-dicyanoanilines were synthesized by a multi-component one-step reaction of aromatic aldehyde, malononitrile and aliphatic aldehyde using tris(hydroxymethyl)aminomethane (THAM) as a catalyst under microwave (MW) irradiation or conventional heating. The optimized reaction condition involved use of 2.5 equivalents of THAM under MW irradiation at 140 W using 20% MW power for 5 min or conventional heating at 80 °C for 8 h in dimethylformamide. The photophysical properties including λmax, quantum yield and Stokes’ shifts of newly synthesized molecules were studied. All compounds exhibited quantum yield in the range of 0.04–0.52 with respect to standard quinine sulphate having quantum yield 0.54. The Stokes’ shifts of all compounds were found in the range of 41–105 nm. The current strategy provides operationally simple protocol using THAM as a catalyst to synthesize 4-alkyl-3-aryl-2,6-dicyanoanilines with diverse structural features to make them available for exploration of their photophysical as well as biological applications.</style></abstract><work-type><style face="normal" font="default" size="100%">Article</style></work-type><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">0.507</style></custom4></record></records></xml>