<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hankare, P. P.</style></author><author><style face="normal" font="default" size="100%">Asabe, M. R.</style></author><author><style face="normal" font="default" size="100%">Kokate, A. V.</style></author><author><style face="normal" font="default" size="100%">Delekar, S. D.</style></author><author><style face="normal" font="default" size="100%">Sathe, D. J.</style></author><author><style face="normal" font="default" size="100%">Mulla, Imtiaz S.</style></author><author><style face="normal" font="default" size="100%">Chougule, B. K.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Effect of annealing on properties of ZrSe2 thin films</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Crystal Growth</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">band gap</style></keyword><keyword><style  face="normal" font="default" size="100%">EDAX</style></keyword><keyword><style  face="normal" font="default" size="100%">Electrodeposition</style></keyword><keyword><style  face="normal" font="default" size="100%">PEC</style></keyword><keyword><style  face="normal" font="default" size="100%">SEM</style></keyword><keyword><style  face="normal" font="default" size="100%">XRD</style></keyword><keyword><style  face="normal" font="default" size="100%">ZrSe2 thin films</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2006</style></year><pub-dates><date><style  face="normal" font="default" size="100%">SEP</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">2</style></number><publisher><style face="normal" font="default" size="100%">ELSEVIER SCIENCE BV</style></publisher><pub-location><style face="normal" font="default" size="100%">PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS</style></pub-location><volume><style face="normal" font="default" size="100%">294</style></volume><pages><style face="normal" font="default" size="100%">254-259</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Thin films of ZrSe2 have been prepared on stainless steel and fluorine-doped tin oxide-coated glass substrates using electrodeposition technique at potentiostatic mode. Double-distilled water containing precursors Zr and Se with ethylene diamine tetra-acetic acid disodium salt as a complexing agent was used to obtain good quality deposits by controlling the rate of reaction. The preparative parameters such as concentration of bath, deposition time, bath temperature, pH of the bath and annealing temperature have been optimized using photoelectrochernical (PEC) technique. The films deposited at optimum preparative parameters are annealed at different temperatures. The film annealed at 200 degrees C shows more photosensitivity. The as-deposited and annealed films at 200 degrees C have been characterized by X-ray diffraction (XRD), energy dispersive analysis by X-ray (EDAX), optical absorption and scanning electron microscopy (SEM). The XRD analysis of the as-deposited and annealed films showed the presence of polycrystalline nature with hexagonal crystal structure. EDAX study reveals that deposited films are almost stoichiometric. Optical absorption study shows the presence of direct transition and band gap energies are found to be 1.5 and 1.38 eV, respectively, for the as-deposited and annealed films. SEM study revels that the grains are uniformly distributed over the surface of substrate for the as-deposited as well as annealed film, which indicates formation of good and compact type of crystal structure. (c) 2006 Elsevier B.V. All rights reserved.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">2</style></issue><work-type><style face="normal" font="default" size="100%">Article</style></work-type><custom3><style face="normal" font="default" size="100%">&lt;p&gt;Foreign&lt;/p&gt;</style></custom3><custom4><style face="normal" font="default" size="100%">1.462</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hankare, P. P.</style></author><author><style face="normal" font="default" size="100%">Patil, A. A.</style></author><author><style face="normal" font="default" size="100%">Chate, P. A.</style></author><author><style face="normal" font="default" size="100%">Garadkar, K. M.</style></author><author><style face="normal" font="default" size="100%">Sathe, D. J.</style></author><author><style face="normal" font="default" size="100%">Manikshete, A. H.</style></author><author><style face="normal" font="default" size="100%">Mulla, Imtiaz S.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Characterization of MoSe2 thin film deposited at room temperature from solution phase</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Crystal Growth</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Crystal morphology</style></keyword><keyword><style  face="normal" font="default" size="100%">Growth from solution</style></keyword><keyword><style  face="normal" font="default" size="100%">Inorganic compound</style></keyword><keyword><style  face="normal" font="default" size="100%">Polycrystalline deposition</style></keyword><keyword><style  face="normal" font="default" size="100%">Semiconducting materials</style></keyword><keyword><style  face="normal" font="default" size="100%">X-ray diffraction</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2008</style></year><pub-dates><date><style  face="normal" font="default" size="100%">DEC</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">1</style></number><publisher><style face="normal" font="default" size="100%">ELSEVIER SCIENCE BV</style></publisher><pub-location><style face="normal" font="default" size="100%">PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS</style></pub-location><volume><style face="normal" font="default" size="100%">311</style></volume><pages><style face="normal" font="default" size="100%">15-19</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;A simple, low-temperature method has been developed to synthesis molybdenum diselenide semiconductor thin films, based on the chemical reaction of conlplexed ammonium molybdate, hydrazine hydrate and sodium Selenosulphate in aqueous alkaline medium. The deposition parameter of the MoSe2 thin film is interpreted in the present investigation. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption and electrical measurements. The deposited film was found to be polycrystalline in hexagonal form. The direct band gap `E-g' for the film was found to be 1.43eV and electrical conductivity in the order of 10(-2)(Omega cm)(-1) with n-type conduction mechanism. (C) 2008 Elsevier B.V. All rights reserved.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">1</style></issue><work-type><style face="normal" font="default" size="100%">Article</style></work-type><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">1.462</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hankare, P. P.</style></author><author><style face="normal" font="default" size="100%">Jadhav, B. V.</style></author><author><style face="normal" font="default" size="100%">Chate, P. A.</style></author><author><style face="normal" font="default" size="100%">Sathe, D. J.</style></author><author><style face="normal" font="default" size="100%">Mulla, Imtiaz S.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Synthesis and characterization of chemically deposited nickel substituted CdSe thin film</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Alloys and Compounds</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Chemical synthesis</style></keyword><keyword><style  face="normal" font="default" size="100%">Crystal growth</style></keyword><keyword><style  face="normal" font="default" size="100%">Electrical conductivity</style></keyword><keyword><style  face="normal" font="default" size="100%">thin film</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2011</style></year><pub-dates><date><style  face="normal" font="default" size="100%">FEB</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">6</style></number><publisher><style face="normal" font="default" size="100%">ELSEVIER SCIENCE SA</style></publisher><pub-location><style face="normal" font="default" size="100%">PO BOX 564, 1001 LAUSANNE, SWITZERLAND</style></pub-location><volume><style face="normal" font="default" size="100%">509</style></volume><pages><style face="normal" font="default" size="100%">2948-2951</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The technologically important Cd(0.5)Ni(0.5)Se thin film has been developed by solution growth technique on non-conducting glass substrate in tartarate bath containing Cd(+2), Ni(+2) ions and sodium selenosulphate in an aqueous alkaline medium at room temperature. Various preparative conditions of the thin films are outlined. The films were characterized by X-ray diffraction, scanning electron microscope, optical absorption and electrical measurements. The X-ray diffraction study indicates that the film is polycrystalline in nature with hexagonal phase. Scanning electron micrograph shows that the film is homogeneous with well-defined grains. The films have high optical absorption coefficient. Thermoelectric power measurement shows p-type conduction mechanism. (C) 2010 Elsevier B.V. All rights reserved.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">6</style></issue><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">2.289
</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hankare, P. P.</style></author><author><style face="normal" font="default" size="100%">Rathod, K. C.</style></author><author><style face="normal" font="default" size="100%">Chate, P. A.</style></author><author><style face="normal" font="default" size="100%">Garadkar, K. M.</style></author><author><style face="normal" font="default" size="100%">Sathe, D. J.</style></author><author><style face="normal" font="default" size="100%">Mulla, Imtiaz S.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Chemical deposition of CuInSe2 thin films by photoelectrochemical applications</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Alloys and Compounds</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Chemical bath deposition</style></keyword><keyword><style  face="normal" font="default" size="100%">Flat band potential</style></keyword><keyword><style  face="normal" font="default" size="100%">Photo response</style></keyword><keyword><style  face="normal" font="default" size="100%">Power output</style></keyword><keyword><style  face="normal" font="default" size="100%">Spectral response</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2012</style></year><pub-dates><date><style  face="normal" font="default" size="100%">JAN</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">1</style></number><publisher><style face="normal" font="default" size="100%">ELSEVIER SCIENCE SA</style></publisher><pub-location><style face="normal" font="default" size="100%">PO BOX 564, 1001 LAUSANNE, SWITZERLAND</style></pub-location><volume><style face="normal" font="default" size="100%">511</style></volume><pages><style face="normal" font="default" size="100%">50-53</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Copper indium diselenide films have been synthesized by chemical bath deposition method. The configuration of fabricated cell is n-CuInSe2|NaOH (1 M) + S (1 M) + Na2S (1 M)|C-(graphite). The photoelectrochemical cell characterization of the films is carried out by studying current-voltage characteristics in dark, capacitance-voltage in dark, barrier height measurements, power output, photoresponse and spectral response. The study shows that CuInSe2 thin films are n-type conductivity. The junction ideality factor is found to be 3.81. The flat band potential is found to be 0.763 V. The barrier height value is found to be 0.232 eV. The study of power output characteristic shows open circuit voltage, short circuit current, fill factor and efficiency are found to be 310 mV, 20 mu A, 42.12% and 0.82%, respectively. Photoresponse shows lighted ideality factor which is 2.92. Spectral response shows the maximum current observed at 650 nm. (C) 2011 Published by Elsevier B.V.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">1</style></issue><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">2.39
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