<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Mallows, John</style></author><author><style face="normal" font="default" size="100%">Planells, Miguel</style></author><author><style face="normal" font="default" size="100%">Thakare, Vishal</style></author><author><style face="normal" font="default" size="100%">Bhosale, Reshma</style></author><author><style face="normal" font="default" size="100%">Ogale, Satishchandra</style></author><author><style face="normal" font="default" size="100%">Robertson, Neil</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">p-type NiO hybrid visible photodetector</style></title><secondary-title><style face="normal" font="default" size="100%">ACS Applied Materials &amp; Interfaces</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">nickel oxide</style></keyword><keyword><style  face="normal" font="default" size="100%">organic</style></keyword><keyword><style  face="normal" font="default" size="100%">oxygen vacancies</style></keyword><keyword><style  face="normal" font="default" size="100%">photodetector</style></keyword><keyword><style  face="normal" font="default" size="100%">pulsed laser deposition</style></keyword><keyword><style  face="normal" font="default" size="100%">surface modifier</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2015</style></year><pub-dates><date><style  face="normal" font="default" size="100%">DEC</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">50</style></number><publisher><style face="normal" font="default" size="100%">AMER CHEMICAL SOC</style></publisher><pub-location><style face="normal" font="default" size="100%">1155 16TH ST, NW, WASHINGTON, DC 20036 USA</style></pub-location><volume><style face="normal" font="default" size="100%">7</style></volume><pages><style face="normal" font="default" size="100%">27597-27601</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;A novel hybrid visible-light photodetector was created using a planar p-type inorganic NiO layer in a junction with an organic electron acceptor layer. The effect of different oxygen pressures on formation of the NiO layer by pulsed laser deposition shows that higher pressure increases the charge carrier density of the film and lowers the dark current in the device. The addition of a monolayer of small molecules containing conjugated pi systems and carboxyl groups at the device interface was also investigated and with correct alignment of the energy levels improves the device performance with respect to the quantum efficiency, responsivity, and photogeneration. The thickness of the Organic layer was also optimized for the device, giving a responsivity of 1.54 X 10(-2) A W-1 in 460 nm light.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">50</style></issue><custom3><style face="normal" font="default" size="100%">&lt;p&gt;Foreign&lt;/p&gt;</style></custom3><custom4><style face="normal" font="default" size="100%">7.145</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Antad, Vivek</style></author><author><style face="normal" font="default" size="100%">Shaikh, Parvez A.</style></author><author><style face="normal" font="default" size="100%">Biswas, Abhijit</style></author><author><style face="normal" font="default" size="100%">Rajput, Shatruhan Singh</style></author><author><style face="normal" font="default" size="100%">Deo, Shrinivas</style></author><author><style face="normal" font="default" size="100%">Shelke, V, Manjusha</style></author><author><style face="normal" font="default" size="100%">Patil, Shivprasad</style></author><author><style face="normal" font="default" size="100%">Ogale, Satishchandra</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Resistive switching in HfO2-x/La0.67Sr0.33MnO3 heterostructures: an intriguing case of low H-field susceptibility of an E-field controlled active interface</style></title><secondary-title><style face="normal" font="default" size="100%">ACS Applied Materials &amp; Interfaces</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">charge trapping-detrapping</style></keyword><keyword><style  face="normal" font="default" size="100%">low external magnetic field</style></keyword><keyword><style  face="normal" font="default" size="100%">oxide-oxide interface</style></keyword><keyword><style  face="normal" font="default" size="100%">pulsed laser deposition</style></keyword><keyword><style  face="normal" font="default" size="100%">resistive switching</style></keyword><keyword><style  face="normal" font="default" size="100%">Schottky barrier</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2021</style></year><pub-dates><date><style  face="normal" font="default" size="100%">NOV </style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">13</style></volume><pages><style face="normal" font="default" size="100%">54133-54142</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">High-performance nonvolatile resistive random access memories (ReRAMs) and their small stimuli control are of immense interest for high-speed computation and big-data processing in the emerging Internet of Things (IoT) arena. Here, we examine the resistive switching (RS) behavior in growth-controlled HfO2/La0.67Sr0.33MnO3 (LSMO) heterostructures and their tunability in a low magnetic field. It is demonstrated that oxygen-deficient HfO2 films show bipolar switching with a high on/off ratio, stable retention, as well as good endurance owing to the orthorhombic-rich phase constitution and charge (de)trapping-enabled Schottky-type conduction. Most importantly, we have demonstrated that RS can be tuned by a very low externally applied magnetic field (similar to 0-30 mT). Remarkably, application of a magnetic field of 30 mT causes RS to be fully quenched and frozen in the high resistive state (HRS) even after the removal of the magnetic field. However, the quenched state could be resurrected by applying a higher bias voltage than the one for initial switching. This is argued to be a consequence of the electronically and ionically ``active'' nature of the HfO2-x/LSMO interface on both sides and its susceptibility to the electric and low magnetic field effects. This result could pave the way for new designs of interface-engineered high-performance oxitronic ReRAM devices.</style></abstract><issue><style face="normal" font="default" size="100%">45</style></issue><work-type><style face="normal" font="default" size="100%">Article</style></work-type><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">9.229</style></custom4></record></records></xml>