<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Badadhe, Satish S.</style></author><author><style face="normal" font="default" size="100%">Mulla, Imtiaz S.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Effect of aluminium doping on structural and gas sensing properties of zinc oxide thin films deposited by spray pyrolysis</style></title><secondary-title><style face="normal" font="default" size="100%">Sensors and Actuators B-Chemical</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Aluminium</style></keyword><keyword><style  face="normal" font="default" size="100%">H(2)S sensor</style></keyword><keyword><style  face="normal" font="default" size="100%">Spray pyrolysis</style></keyword><keyword><style  face="normal" font="default" size="100%">thin film</style></keyword><keyword><style  face="normal" font="default" size="100%">Zinc oxide</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2011</style></year><pub-dates><date><style  face="normal" font="default" size="100%">AUG</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">2</style></number><publisher><style face="normal" font="default" size="100%">ELSEVIER SCIENCE SA</style></publisher><pub-location><style face="normal" font="default" size="100%">PO BOX 564, 1001 LAUSANNE, SWITZERLAND</style></pub-location><volume><style face="normal" font="default" size="100%">156</style></volume><pages><style face="normal" font="default" size="100%">943-948</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;A facile spray pyrolysis route is used to deposit aluminium doped ZnO (AZO) thin films on to the glass substrates. It is observed that on aluminium doping the particle size of ZnO reduces significantly; moreover, uniformity of particle also gets enhanced. Their XRD study reveals that intensity ratio of crystal planes depend on the aluminium doping concentration. The gas response studies of; similar to 800 nm thick Al-doped ZnO films at different operating temperatures show that 5 at% Al-doped ZnO thin film exhibits highest response towards H(2)S gas at 200 degrees C. The results suggest that the gas response strongly depends on the particle size and aluminium doping in the ZnO. (C) 2011 Elsevier B.V. All rights reserved.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">2</style></issue><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">4.34
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