<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Jariwala, Deep</style></author><author><style face="normal" font="default" size="100%">Sangwan, Vinod K.</style></author><author><style face="normal" font="default" size="100%">Late, Dattatray J.</style></author><author><style face="normal" font="default" size="100%">Johns, James E.</style></author><author><style face="normal" font="default" size="100%">Dravid, Vinayak P.</style></author><author><style face="normal" font="default" size="100%">Marks, Tobin J.</style></author><author><style face="normal" font="default" size="100%">Lauhon, Lincoln J.</style></author><author><style face="normal" font="default" size="100%">Hersam, Mark C.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Band-like transport in high mobility unencapsulated single-layer MoS2 transistors</style></title><secondary-title><style face="normal" font="default" size="100%">Applied Physics Letters</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2013</style></year><pub-dates><date><style  face="normal" font="default" size="100%">APR</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">102</style></volume><pages><style face="normal" font="default" size="100%">Article Number: 173107</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (&gt;60 cm(2)/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low level of extrinsic contamination. While charge transport in the sub-threshold regime is consistent with a variable range hopping model, monotonically decreasing field-effect mobility with increasing temperature suggests band-like transport in the linear regime. At temperatures below 100 K, temperature-independent mobility is limited by Coulomb scattering, whereas, at temperatures above 100 K, phonon-limited mobility decreases as a power law with increasing temperature. (C) 2013 AIP Publishing LLC.</style></abstract><issue><style face="normal" font="default" size="100%">17</style></issue><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">3.142</style></custom4></record></records></xml>