<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Bogle, Kashinath A.</style></author><author><style face="normal" font="default" size="100%">Bachhav, Mukesh N.</style></author><author><style face="normal" font="default" size="100%">Deo, Meenal S.</style></author><author><style face="normal" font="default" size="100%">Valanoor, Nagarajan</style></author><author><style face="normal" font="default" size="100%">Ogale, Satishchandra B.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Enhanced nonvolatile resistive switching in dilutely cobalt doped TiO2</style></title><secondary-title><style face="normal" font="default" size="100%">Applied Physics Letters</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">cobalt</style></keyword><keyword><style  face="normal" font="default" size="100%">Doping</style></keyword><keyword><style  face="normal" font="default" size="100%">magnetic switching</style></keyword><keyword><style  face="normal" font="default" size="100%">random-access storage</style></keyword><keyword><style  face="normal" font="default" size="100%">titanium compounds</style></keyword><keyword><style  face="normal" font="default" size="100%">vacancies (crystal)</style></keyword><keyword><style  face="normal" font="default" size="100%">valency</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2009</style></year><pub-dates><date><style  face="normal" font="default" size="100%">NOV</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">20</style></number><publisher><style face="normal" font="default" size="100%">AMER INST PHYSICS</style></publisher><pub-location><style face="normal" font="default" size="100%">CIRCULATION &amp; FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA</style></pub-location><volume><style face="normal" font="default" size="100%">95</style></volume><pages><style face="normal" font="default" size="100%">203502</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Incorporation of dilute concentration of dopant having a valence state different than that of the host cation enables controlled incorporation proximity vacancy defects for local charge balance. Since nonvolatile resistive switching is a phenomenon tied to such defects, it can be expected to be influenced by dilute doping. In this work, we demonstrate that enhanced nonvolatile resistive switching is realized in dilutely cobalt doped TiO2 films grown at room temperature. We provide essential characterizations and analyses. We suggest that the oxygen vacancies in the proximity of immobile dopants provide well distributed anchors for the development of systematic filamentary tracks.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">20</style></issue><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">3.820</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Rana, Abhimanyu</style></author><author><style face="normal" font="default" size="100%">Bogle, Kashinath A.</style></author><author><style face="normal" font="default" size="100%">Game, Onkar S.</style></author><author><style face="normal" font="default" size="100%">Patil, Shankar</style></author><author><style face="normal" font="default" size="100%">Valanoor, Nagarajan</style></author><author><style face="normal" font="default" size="100%">Ogale, Satishchandra B.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Nanoscale modulation of electronic states across unit cell steps on the surface of an epitaxial colossal magnetoresistance manganite film</style></title><secondary-title><style face="normal" font="default" size="100%">Applied Physics Letters</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">colossal magnetoresistance</style></keyword><keyword><style  face="normal" font="default" size="100%">electronic density of states</style></keyword><keyword><style  face="normal" font="default" size="100%">lanthanum compounds</style></keyword><keyword><style  face="normal" font="default" size="100%">magnetic epitaxial layers</style></keyword><keyword><style  face="normal" font="default" size="100%">Nanostructured materials</style></keyword><keyword><style  face="normal" font="default" size="100%">pulsed laser deposition</style></keyword><keyword><style  face="normal" font="default" size="100%">reflection high energy electron diffraction</style></keyword><keyword><style  face="normal" font="default" size="100%">scanning tunnelling microscopy</style></keyword><keyword><style  face="normal" font="default" size="100%">scanning tunnelling spectroscopy</style></keyword><keyword><style  face="normal" font="default" size="100%">strontium compounds</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2010</style></year><pub-dates><date><style  face="normal" font="default" size="100%">JUN</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">26</style></number><publisher><style face="normal" font="default" size="100%">AMER INST PHYSICS</style></publisher><pub-location><style face="normal" font="default" size="100%">CIRCULATION &amp; FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA</style></pub-location><volume><style face="normal" font="default" size="100%">96</style></volume><pages><style face="normal" font="default" size="100%">Article No. 263108</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The nature of electronic states near the edge of unit cell steps on the surface of epitaxial La(0.7)Sr(0.3)MnO(3) (LSMO) thin films grown by real-time reflection high energy electron diffraction monitored pulsed laser deposition is examined by scanning tunneling microscopy and scanning tunneling spectroscopy techniques. It is observed that the electronic states are strongly modulated near the step edge with considerably high gap at the edge and low gap on the terrace. This modulation weakens at low temperature. The temperature evolution of the density of states and the nature of gap in deep metallic state of LSMO are also discussed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3455886]&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">26</style></issue><work-type><style face="normal" font="default" size="100%">Article</style></work-type><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">3.820</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Bogle, Kashinath A.</style></author><author><style face="normal" font="default" size="100%">Cheung, Jeffrey</style></author><author><style face="normal" font="default" size="100%">Chen, Yong-Lun</style></author><author><style face="normal" font="default" size="100%">Liao, Sheng-Chieh</style></author><author><style face="normal" font="default" size="100%">Lai, Chih-Hung</style></author><author><style face="normal" font="default" size="100%">Chu, Ying-Hao</style></author><author><style face="normal" font="default" size="100%">Gregg, John M.</style></author><author><style face="normal" font="default" size="100%">Ogale, Satishchandra B.</style></author><author><style face="normal" font="default" size="100%">Valanoor, Nagarajan</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Epitaxial magnetic oxide nanocrystals via phase decomposition of bismuth perovskite precursors</style></title><secondary-title><style face="normal" font="default" size="100%">Advanced Functional Materials</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Bi2O3 evaporation</style></keyword><keyword><style  face="normal" font="default" size="100%">bismuth perovskites</style></keyword><keyword><style  face="normal" font="default" size="100%">epitaxial nanostructures</style></keyword><keyword><style  face="normal" font="default" size="100%">magnetic oxides</style></keyword><keyword><style  face="normal" font="default" size="100%">phase separation</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2012</style></year><pub-dates><date><style  face="normal" font="default" size="100%">DEC</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">24</style></number><publisher><style face="normal" font="default" size="100%">WILEY-V C H VERLAG GMBH</style></publisher><pub-location><style face="normal" font="default" size="100%">BOSCHSTRASSE 12, D-69469 WEINHEIM, GERMANY</style></pub-location><volume><style face="normal" font="default" size="100%">22</style></volume><pages><style face="normal" font="default" size="100%">5224-5230</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The phase instability of bismuth perovskite (BiMO3), where M is a ferromagnetic cation, is exploited to create self-assembled magnetic oxide nanocrystal arrays on oxide supports. Conditions during pulsed laser deposition are tuned so as to induce complete breakdown of the perovskite precursor into bismuth oxide (Bi2O3) and metal oxide (M-Ox) pockets. Subsequent cooling in vacuum volatizes the Bi2O3 leaving behind an array of monodisperse nanocrystals. In situ reflective high energy electron diffraction beam is exploited to monitor the synthesis in real-time. Analysis of the patterns confirms the phase separation and volatization process. Successful synthesis of M-Ox, where M = Mn, Fe, Co, and Cr, is shown using this template-free facile approach. Detailed magnetic characterization of nanocrystals is carried out to reveal the functionalities such as magnetic anisotropy as well as larger than bulk moments, as expected in these oxide nanostructures.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">24</style></issue><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">9.765
</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Rana, Abhimanyu</style></author><author><style face="normal" font="default" size="100%">Lu, Haidong</style></author><author><style face="normal" font="default" size="100%">Bogle, Kashinath A.</style></author><author><style face="normal" font="default" size="100%">Zhang, Qi</style></author><author><style face="normal" font="default" size="100%">Vasudevan, Rama</style></author><author><style face="normal" font="default" size="100%">Thakare, Vishal</style></author><author><style face="normal" font="default" size="100%">Gruverman, Alexei</style></author><author><style face="normal" font="default" size="100%">Ogale, Satishchandra</style></author><author><style face="normal" font="default" size="100%">Valanoor, Nagarajan</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Scaling behavior of resistive switching in epitaxial bismuth ferrite heterostructures</style></title><secondary-title><style face="normal" font="default" size="100%">Advanced Functional Materials</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2014</style></year><pub-dates><date><style  face="normal" font="default" size="100%">JUL</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">25</style></number><publisher><style face="normal" font="default" size="100%">WILEY-V C H VERLAG GMBH</style></publisher><pub-location><style face="normal" font="default" size="100%">BOSCHSTRASSE 12, D-69469 WEINHEIM, GERMANY</style></pub-location><volume><style face="normal" font="default" size="100%">24</style></volume><pages><style face="normal" font="default" size="100%">3962-3969</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Resistive switching (RS) of (001) epitaxial multiferroic BiFeO3/La0.67Sr0.33MnO3/SrTiO3 heterostructures is investigated for varying lengths scales in both the thickness and lateral directions. Macroscale current-voltage analyses in conjunction with local conduction atomic force microscopy (CAFM) reveal that whilst both the local and global resistive states are strongly driven by polarization direction, the type of conduction mechanism is different for each distinct thickness regime. Electrode-area dependent studies confirm the RS is dominated by an interface mechanism and not by filamentary formation. Furthermore, CAFM maps allow deconvolution of the roles played by domains and domain walls during the RS process. It is shown that the net polarization direction, and not domain walls, controls the conduction process. An interface mechanism based on barrier height and width alteration due to polarization reversal is proposed, and the role of electronic reconstruction at the interface is further investigated.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">25</style></issue><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">10.48</style></custom4></record></records></xml>