<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Kundu, Sumana</style></author><author><style face="normal" font="default" size="100%">Ghosh, Sujoy</style></author><author><style face="normal" font="default" size="100%">Fralaide, Michael</style></author><author><style face="normal" font="default" size="100%">Narayanan, T. N.</style></author><author><style face="normal" font="default" size="100%">Pillai, Vijayamohanan K.</style></author><author><style face="normal" font="default" size="100%">Talapatra, Saikat</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Fractional photo-current dependence of graphene quantum dots prepared from carbon nanotubes</style></title><secondary-title><style face="normal" font="default" size="100%">Physical Chemistry Chemical Physics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2015</style></year><pub-dates><date><style  face="normal" font="default" size="100%">AUG</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">38</style></number><publisher><style face="normal" font="default" size="100%">ROYAL SOC CHEMISTRY</style></publisher><pub-location><style face="normal" font="default" size="100%">THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND</style></pub-location><volume><style face="normal" font="default" size="100%">17</style></volume><pages><style face="normal" font="default" size="100%">24566-24569</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;We report on the photo-conductivity studies of chemically synthesized graphene quantum dots (GQDs) of average size 12 nm obtained by the oxidative acid treatment of MWCNTs. The dependence of photocurrent I-ph (I-ph = I-ill - I-dark) on the laser intensity P under a wide range of laser intensities (5 mW &amp;lt;= P &amp;lt;= 60 mW) shows a fractional power dependence of I-ph on light intensity. The temperature dependence (300 K &amp;lt; T &amp;lt; 50 K) of I-ph observed in thin films of these GQDs indicates that in the higher temperature region (T &amp;gt; similar to 100 K), as the temperature increases, the number of thermally generated carriers increase resulting in increased I-ph. At sufficiently low temperatures (T &amp;lt;= 100 K), a constant I-ph is observed, indicating a constant photocarrier density. Such a behavior is typically observed in many photoactive disordered semiconductors, which are often used in a variety of applications. We believe that the investigations presented here will enhance our understanding of the photocurrent generation phenomenon in chemically obtained GQDs.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">38</style></issue><custom3><style face="normal" font="default" size="100%">&lt;p&gt;Foreign&lt;/p&gt;</style></custom3><custom4><style face="normal" font="default" size="100%">4.449</style></custom4></record></records></xml>