<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Suryawanshi, S. R.</style></author><author><style face="normal" font="default" size="100%">Kolhe, Pankaj S.</style></author><author><style face="normal" font="default" size="100%">Gavhane, D. S.</style></author><author><style face="normal" font="default" size="100%">Patil, S. S.</style></author><author><style face="normal" font="default" size="100%">Chavan, P. G.</style></author><author><style face="normal" font="default" size="100%">More, Mahendra A.</style></author><author><style face="normal" font="default" size="100%">Late, Dattatray J.</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Tsujino, S.</style></author><author><style face="normal" font="default" size="100%">Gobrecht, J.</style></author><author><style face="normal" font="default" size="100%">Paraliev, M.</style></author><author><style face="normal" font="default" size="100%">Braun, H. H.</style></author><author><style face="normal" font="default" size="100%">Groening, O.</style></author><author><style face="normal" font="default" size="100%">Feurer, T.</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Enhancement in the field emission behavior of graphene in N-2/O-2 high vacuum ambience</style></title><secondary-title><style face="normal" font="default" size="100%">2014 27th International Vacuum Nanoelectronics Conference (IVNC) </style></secondary-title><tertiary-title><style face="normal" font="default" size="100%">International Vacuum Nanoelectronics Conference</style></tertiary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">graphene</style></keyword><keyword><style  face="normal" font="default" size="100%">Pressure Dependent Field Emission</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2014</style></year><pub-dates><date><style  face="normal" font="default" size="100%">JUL</style></date></pub-dates></dates><publisher><style face="normal" font="default" size="100%">IEEE, 345 E 47th ST, New York, NY 10017 USA</style></publisher><pub-location><style face="normal" font="default" size="100%">Engelberg, Switzerland</style></pub-location><isbn><style face="normal" font="default" size="100%">978-1-4799-5306-6</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Herein we report, pressure dependent field emission (FE) behaviour of a few-layer graphene emitter. Gas dependent FE properties have been investigated in ultra high vacuum (UHV), as well as in N-2 and O-2 ambience at base pressure similar to 1x10(-6) torr. Interestingly, the graphene emitter when operated in N-2/O-2 ambience exhibits lower turn-on field and higher emission current density, as compared to the UHV conditions. The emission current stability investigated at preset value of similar to 1 mu A over the period of more than 2 hrs is found better in the N2 ambience and is characterized by fewer fluctuations, in contrast to the behaviour in the O-2 ambience. The observed enhanced electron emission behavior in N-2/O-2 ambience is attributed to modulation of the work function of graphene emitter.&lt;/p&gt;</style></abstract><notes><style face="normal" font="default" size="100%">27th International Vacuum Nanoelectronics Conference (IVNC), Engelberg, SWITZERLAND, JUL 06-10, 2014</style></notes><custom4><style face="normal" font="default" size="100%">&lt;br&gt;&lt;p&gt;&amp;nbsp;&lt;/p&gt;</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Suryawanshi, Sachin R.</style></author><author><style face="normal" font="default" size="100%">Kolhe, Pankaj S.</style></author><author><style face="normal" font="default" size="100%">Rout, Chandra S.</style></author><author><style face="normal" font="default" size="100%">Late, Dattatray J.</style></author><author><style face="normal" font="default" size="100%">More, Mahendra A.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Spectral analysis of the emission current noise exhibited by few layer WS2 nanosheets emitter</style></title><secondary-title><style face="normal" font="default" size="100%">Ultramicroscopy</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Current fluctuations</style></keyword><keyword><style  face="normal" font="default" size="100%">field emission</style></keyword><keyword><style  face="normal" font="default" size="100%">Noise</style></keyword><keyword><style  face="normal" font="default" size="100%">WS2 nanosheets</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2015</style></year><pub-dates><date><style  face="normal" font="default" size="100%">FEB</style></date></pub-dates></dates><publisher><style face="normal" font="default" size="100%">ELSEVIER SCIENCE BV</style></publisher><pub-location><style face="normal" font="default" size="100%">PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS</style></pub-location><volume><style face="normal" font="default" size="100%">149</style></volume><pages><style face="normal" font="default" size="100%">51-57</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Spectral analysis of the field emission (FE) current fluctuations has been carried out at the base pressure similar to 1 x 10(-8) mbar. The emission current stability investigated at preset value of 2 mu A is characterized by `step like fluctuation. The spectral analysis performed on a FFT (Fast Fourier Transform) analyzer revealed that the observed noise is of 1/f(alpha) type, with the value of alpha as similar to 1.05. The estimated value of alpha implies that the current fluctuations are mainly due the various processes occurring on atomic scale like adsorption, migration, and/or desorption of the residual gas species on the emitter surface. (C) 2014 Elsevier B.V. All rights reserved.&lt;/p&gt;</style></abstract><custom3><style face="normal" font="default" size="100%">&lt;p&gt;Foreign&lt;/p&gt;</style></custom3><custom4><style face="normal" font="default" size="100%">2.874</style></custom4></record></records></xml>