<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Navale, Shalaka C.</style></author><author><style face="normal" font="default" size="100%">Sheini, Farid Jamali</style></author><author><style face="normal" font="default" size="100%">Patil, Sandip S.</style></author><author><style face="normal" font="default" size="100%">Mulla, Imtiaz S.</style></author><author><style face="normal" font="default" size="100%">Joag, Dilip S.</style></author><author><style face="normal" font="default" size="100%">More, Mahendra A.</style></author><author><style face="normal" font="default" size="100%">Gosavi, Suresh W.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Field emission properties of Al-doped ZnO nanostructures</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Nano Research</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">field emission</style></keyword><keyword><style  face="normal" font="default" size="100%">Fowler-Nordheim plots</style></keyword><keyword><style  face="normal" font="default" size="100%">Nanostructures</style></keyword><keyword><style  face="normal" font="default" size="100%">ZnO</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2009</style></year><pub-dates><date><style  face="normal" font="default" size="100%">JAN</style></date></pub-dates></dates><publisher><style face="normal" font="default" size="100%">TRANS TECH PUBLICATIONS LTD</style></publisher><pub-location><style face="normal" font="default" size="100%">LAUBISRUTISTR 24, STAFA-ZUERICH, CH-8712, SWITZERLAND</style></pub-location><volume><style face="normal" font="default" size="100%">5</style></volume><pages><style face="normal" font="default" size="100%">231-237</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Field emission from Al-doped ZnO nanostrcutures has been investigated in planar diode configuration under ultra high vacuum conditions. The Al-doped ZnO nanostructures were synthesized by co-precipitation method with varying aluminium concentrations. The as- synthesized product was characterized by x-ray diffraction, scanning electron microscope and energy dispersive x-ray analysis. The threshold field required to draw a current density of similar to 1 mu A/cm(2) was observed to be similar to 2.0 V/mu m and similar to 2.3 V/mu m for Al-doped ZnO nanostructures synthesized with aluminium concentrations of 1% and 3%, respectively. The Fowler- Nordheim (F-N) plots for both the specimens exhibit non-linear behaviour, which is observed to be specimen dependent. The nonlinearity observed in the F-N plots has been interpreted on the basis of the theory of electron emission from semiconductor emitters. The field enhancement factors, estimated from the slope of the F-N plots, are found to be similar to 9.3 x 10(3) and 3.9 x 10(3) for 1% and 3% Al-doped ZnO emitters, respectively. The high values of the field enhancement factor Suggest that the emission is from the nanostructures. The emission current stability measured at the preset value of similar to 2 mu A over a period of more than three hours is found to be fairly stable. The results indicate use of Al-doped ZnO nanostructures as promising emitters for field emission based devices.&lt;/p&gt;</style></abstract><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">0.492</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Suryawanshi, Sachin R.</style></author><author><style face="normal" font="default" size="100%">Warule, Sambhaji S.</style></author><author><style face="normal" font="default" size="100%">Patil, Sandip S.</style></author><author><style face="normal" font="default" size="100%">Patil, Kashinath R.</style></author><author><style face="normal" font="default" size="100%">More, Mahendra A.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Vapor-liquid-solid growth of one-dimensional tin sulfide (sns) nanostructures with promising field emission behavior</style></title><secondary-title><style face="normal" font="default" size="100%">ACS Applied Materials &amp; Interfaces</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Electron emission</style></keyword><keyword><style  face="normal" font="default" size="100%">ID nanostructure</style></keyword><keyword><style  face="normal" font="default" size="100%">SnS nanowires</style></keyword><keyword><style  face="normal" font="default" size="100%">thermal evaporation</style></keyword><keyword><style  face="normal" font="default" size="100%">vapor-liquid-solid (VLS) growth</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2014</style></year><pub-dates><date><style  face="normal" font="default" size="100%">FEB</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">3</style></number><publisher><style face="normal" font="default" size="100%">AMER CHEMICAL SOC</style></publisher><pub-location><style face="normal" font="default" size="100%">1155 16TH ST, NW, WASHINGTON, DC 20036 USA</style></pub-location><volume><style face="normal" font="default" size="100%">6</style></volume><pages><style face="normal" font="default" size="100%">2018-2025</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Single-crystalline ultralong tin sulfide (SnS) nanowires has been grown by a thermal evaporation technique under optimized conditions on gold-coated silicon substrates, and for the first time, field emission investigations on the SnS nanowires at the base pressure of 1 X 10(-8) mbar are reported. It has been revealed that the surface morphology of the as-synthesized SnS nanostructures is significantly influenced by the deposition temperature and duration. Structural and morphological analyses of as-synthesized SnS nanostructures have been carried out using X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). To understand the optical and electronic properties of as-synthesized SnS nanowires, ultraviolet-visible (UV-vis), photo-luminescence (PL), and X-ray photoelectron spectroscopy (XPS) studies were carried out. The SEM and TEM measurements reveal the formation of ultralong SnS nanowires, with an average diameter of 80 nm. A plausible explanation on the vapor-solid-liquid (VLS) growth mechanism based on the experimental results and reported literature has been presented. Furthermore, the field emission characteristics of the SnS nanowires are found to be superior to the other metal chalcogenide nanostructures. The synthesized SnS nanowire emitter delivers a high current density of similar to 2.5 mA/cm(2) at an applied electric field of similar to 4.55 V/mu m. The emission current stability over a period of 6 h is observed to be good. The observed results demonstrate the potential of the SnS nanowire emitter as an electron source for practical applications in vacuum nano/microelectronic devices.&lt;/p&gt;</style></abstract><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">5.76</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Patil, Sandip S.</style></author><author><style face="normal" font="default" size="100%">Harpale, Kashmira V.</style></author><author><style face="normal" font="default" size="100%">Koiry, Shankar P.</style></author><author><style face="normal" font="default" size="100%">Patil, Kashinath R.</style></author><author><style face="normal" font="default" size="100%">Aswal, Dinesh K.</style></author><author><style face="normal" font="default" size="100%">More, Mahendra A.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Multifunctional polyaniline-tin oxide (PANI-SnO2) nanocomposite: synthesis, electrochemical, and field emission investigations</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Applied Polymer Science</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">conducting polymers</style></keyword><keyword><style  face="normal" font="default" size="100%">Electrochemistry</style></keyword><keyword><style  face="normal" font="default" size="100%">nanostructured polymers</style></keyword><keyword><style  face="normal" font="default" size="100%">surfaces and interfaces</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2015</style></year><pub-dates><date><style  face="normal" font="default" size="100%">FEB</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">5</style></number><publisher><style face="normal" font="default" size="100%">WILEY-BLACKWELL</style></publisher><pub-location><style face="normal" font="default" size="100%">111 RIVER ST, HOBOKEN 07030-5774, NJ USA</style></pub-location><volume><style face="normal" font="default" size="100%">132</style></volume><pages><style face="normal" font="default" size="100%">Article Number: 41401</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Synthesis of PANI-SnO2 nanocomposite has been performed using a simple two step chemical oxidative polymerization route. The structural, morphological and chemical properties of the as-synthesized PANI-SnO2 nanocomposite have been revealed by various characterization techniques such as SEM, TEM, XRD, FTIR, and XPS. Interestingly the as-synthesized PANI-SnO2 nanocomposite exhibits supercapacitance value of 721 F g(-1) with energy density 64 Wh kg(-1), which is noticed to be higher than that of pristine SnO2 and PANI nanostructures. Furthermore, the galvanostatic charge-discharge characteristics revealed pseudocapacitive nature of the PANI-SnO2 nanocomposite. The estimated values of charge transfer resistance and series resistance estimated from the Nyquist plot are found to be lower. Along with the supercapacitive nature, PANI-SnO2 nanocomposite showed promising field emission behavior. The threshold field, required to draw emission current density of 1 A/cm(2), is observed to be 0.90 V/m and emission current density of 1.2 mA/cm(2) has been drawn at applied field of approximate to 2.6 V/m. The emission current stability investigated at preset values of 0.02 and 0.1 mA/cm(2) is observed to be fairly stable over duration of more than 3 h. The enhanced supercapacitance values, as well as, the promising field emission characteristics are attributed to the synergic effect of SnO2 nanoparticles and PANI nanotubes. (c) 2014 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2015, 132, 41401.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">5</style></issue><custom3><style face="normal" font="default" size="100%">&lt;p&gt;Foreign&lt;/p&gt;</style></custom3><custom4><style face="normal" font="default" size="100%">1.866</style></custom4></record></records></xml>