<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Pawbake, Amit S.</style></author><author><style face="normal" font="default" size="100%">Island, Joshua O.</style></author><author><style face="normal" font="default" size="100%">Flores, Eduardo</style></author><author><style face="normal" font="default" size="100%">Ramon Ares, Jose</style></author><author><style face="normal" font="default" size="100%">Sanchez, Carlos</style></author><author><style face="normal" font="default" size="100%">Ferrer, Isabel J.</style></author><author><style face="normal" font="default" size="100%">Jadkar, Sandesh R.</style></author><author><style face="normal" font="default" size="100%">van der Zant, Herre S. J.</style></author><author><style face="normal" font="default" size="100%">Castellanos-Gomez, Andres</style></author><author><style face="normal" font="default" size="100%">Late, Dattatray J.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Temperature-dependent raman spectroscopy of titanium trisulfide (TiS3) nanoribbons and nanosheets</style></title><secondary-title><style face="normal" font="default" size="100%">ACS Applied Materials &amp; Interfaces</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">2D semiconductors</style></keyword><keyword><style  face="normal" font="default" size="100%">layered materials</style></keyword><keyword><style  face="normal" font="default" size="100%">Raman spectroscopy</style></keyword><keyword><style  face="normal" font="default" size="100%">thermal effect</style></keyword><keyword><style  face="normal" font="default" size="100%">TiS3 nanoribbons</style></keyword><keyword><style  face="normal" font="default" size="100%">TiS3 nanosheets</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2015</style></year><pub-dates><date><style  face="normal" font="default" size="100%">NOV</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">43</style></number><publisher><style face="normal" font="default" size="100%">AMER CHEMICAL SOC</style></publisher><pub-location><style face="normal" font="default" size="100%">1155 16TH ST, NW, WASHINGTON, DC 20036 USA</style></pub-location><volume><style face="normal" font="default" size="100%">7</style></volume><pages><style face="normal" font="default" size="100%">24185-24190</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Titanium trisulfide (TiS3) has recently attracted the interest of the 2D community because it presents a direct bandgap of similar to 1.0 eV, shows remarkable photoresponse, and has a predicted carrier mobility up to 10000 cm(2) V-1 s(-1). However, a study of the vibrational properties of TiS3, relevant to understanding the electron-phonon interaction that can be the main mechanism limiting the charge carrier mobility, is still lacking. In this work, we take the first steps to study the vibrational properties of TiS3 through temperature-dependent Raman spectroscopy measurements of TiS3 nanoribbons and nanosheets. Our investigation shows that all the Raman modes linearly soften (red shift) as the temperature increases from 88 to 570 K due to anharmonic vibrations of the lattice, which also includes contributions from the lattice thermal expansion. This softening with the temperature of the TiS3 modes is more pronounced than that observed in other 2D semiconductors, such as MoS2, MoSe2, WSe2, and black phosphorus (BP). This marked temperature dependence of the Raman spectra could be exploited to determine the temperature of TiS3 nanodevices by using Raman spectroscopy as a noninvasive and local thermal probe. Interestingly, the TiS3 nanosheets show a stronger temperature dependence of the Raman modes than the nanoribbons, which we attribute to lower interlayer coupling in the nanosheets.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">43</style></issue><custom3><style face="normal" font="default" size="100%">&lt;p&gt;Foreign&lt;/p&gt;</style></custom3><custom4><style face="normal" font="default" size="100%">7.145</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Pawbake, Amit S.</style></author><author><style face="normal" font="default" size="100%">Mishra, K. K.</style></author><author><style face="normal" font="default" size="100%">Machuno, Luis G. B.</style></author><author><style face="normal" font="default" size="100%">Gelamo, Rogerio V.</style></author><author><style face="normal" font="default" size="100%">Ravindranathan, T. R.</style></author><author><style face="normal" font="default" size="100%">Rout, Chandra Sekhar</style></author><author><style face="normal" font="default" size="100%">Late, Dattatray J.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Temperature and pressure dependent Raman spectroscopy of plasma treated multilayer graphene nanosheets</style></title><secondary-title><style face="normal" font="default" size="100%">Diamond and Related Materials</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">graphene</style></keyword><keyword><style  face="normal" font="default" size="100%">high pressure</style></keyword><keyword><style  face="normal" font="default" size="100%">Phonon</style></keyword><keyword><style  face="normal" font="default" size="100%">Plasma treated graphene</style></keyword><keyword><style  face="normal" font="default" size="100%">Raman spectroscopy</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2018</style></year><pub-dates><date><style  face="normal" font="default" size="100%">APR </style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">84</style></volume><pages><style face="normal" font="default" size="100%">146-156</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Understanding of the fine structure at the atomic level and properties of graphene by creating defects is important from the point of view of thermal and stress management. Here we report Raman spectroscopic studies on pristine and plasma treated multilayer graphene to explore the remarkable structure and phonon properties with temperature and pressure. Temperature dependent studies illustrate monotonic softening of G and G′ bands in the temperature range 78 to 573 K. This process can be of fundamental importance in other promising and emerging nano and heterostructured materials. The pressure dependent Raman spectroscopic investigations on G-band of these samples were carried out up to 25 GPa using a diamond anvil cell. Comparatively weak and more compressible nature of the G band (E2g in-plane mode) as a function of applied pressure is found in plasma treated graphene. After pressure release, the samples recover to their original ordered structure. The present study is important for further understanding of the fine structure, properties and effect of defects in graphene, which can affect the atomic bonds, thermal expansion, specific heat, and thermal conductivity as well.&lt;/p&gt;</style></abstract><work-type><style face="normal" font="default" size="100%">Journal Article</style></work-type><custom3><style face="normal" font="default" size="100%">&lt;p&gt;Foreign&lt;/p&gt;</style></custom3><custom4><style face="normal" font="default" size="100%">&lt;p&gt;2.561&lt;/p&gt;</style></custom4></record></records></xml>