<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Deshmukh, S. L.</style></author><author><style face="normal" font="default" size="100%">Pingale, P. C.</style></author><author><style face="normal" font="default" size="100%">Chavan, G. T.</style></author><author><style face="normal" font="default" size="100%">Pawar, S. T.</style></author><author><style face="normal" font="default" size="100%">Prakshale, V. M.</style></author><author><style face="normal" font="default" size="100%">Kamble, S. S.</style></author><author><style face="normal" font="default" size="100%">Jadkar, S. R.</style></author><author><style face="normal" font="default" size="100%">Chaure, N. B.</style></author><author><style face="normal" font="default" size="100%">Gopinath, C. S.</style></author><author><style face="normal" font="default" size="100%">Maldar, N. N.</style></author><author><style face="normal" font="default" size="100%">Deshmukh, L. P.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Compositional dependence of electrical conduction in solution grown Zn1-xCrxSe thin films: a correlation</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Materials Science: Materials in Electronics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year><pub-dates><date><style  face="normal" font="default" size="100%">MAR</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">28 </style></volume><pages><style face="normal" font="default" size="100%">5070-5074</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Zinc selenide (ZnSe) has a typical band gap of 2.7 eV suitable for window application and can easily be synthesized using a liquid phase chemical bath deposition. An attempt is made to tune its band gap and other characteristics to cope with a maxima of the solar spectrum by deliberate addition of Cr3+. ZnSe and Zn1-xCrxSe (0 &lt;= x &lt;= 0.35) thin films were obtained under the controlled deposition conditions (temperature = 70 A degrees C, time = 210 min, pH = 10, etc). The compositional analysis showed Zn2+ replacement by Cr3+. The X-ray photoelectron spectroscopy revealed chemical states of the constituents Zn, Cr and Se as 2(+), 3(+) and 2(-) respectively. The electrical conductivity and thermo-power measurements in the 300-550 K temperature range showed semiconducting nature of the material and that the electrical conduction is of the n-type. The electrical conductivity is found to be increased continuously up to x = 0.05 and then decreased for further increase in x. The Hall-probe measurements also confirmed n-type conduction. The average Hall coefficient for pure ZnSe is -1.03 x 10(7) cm(3)/C whereas, it is -4.55 x 10(6) cm(3)/C for a sample with x = 0.35.</style></abstract><issue><style face="normal" font="default" size="100%">6</style></issue><work-type><style face="normal" font="default" size="100%">Article</style></work-type><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">2.019</style></custom4></record></records></xml>