<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Mazumder, K.</style></author><author><style face="normal" font="default" size="100%">Sharma, A.</style></author><author><style face="normal" font="default" size="100%">Kumar, Y.</style></author><author><style face="normal" font="default" size="100%">Bankar, P.</style></author><author><style face="normal" font="default" size="100%">More, M. A.</style></author><author><style face="normal" font="default" size="100%">Devan, R.</style></author><author><style face="normal" font="default" size="100%">Shirage, P. M.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Enhancement of field electron emission in topological insulator Bi2Se3 by Ni doping</style></title><secondary-title><style face="normal" font="default" size="100%">Physical Chemistry Chemical Physics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year><pub-dates><date><style  face="normal" font="default" size="100%">JUN</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">20</style></volume><pages><style face="normal" font="default" size="100%">18429-18435</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Nanostructures of bismuth selenide (Bi2Se3), a 3D topological insulator material, and nickel (Ni) doped Bi2Se3 samples were prepared by a hydrothermal method to explore the field emission properties. An enrichment in the field electron emission (FE) properties in terms of the threshold and turn-on field values of Bi2Se3 and Ni doped Bi2Se3 nanostructures was measured at a base pressure of ∼1 × 10−8 mbar. Using the background of the Fowler–Nordheim (FN) theory a field enhancement factor (β) of 5.7 × 103 and a threshold field value of 2.5 V μm−1 for 7.5% Ni doped Bi2Se3 were determined by investigating the J–E plot of the FE data. The value of β is three times higher than that of pure Bi2Se3 confirming the superior FE properties. The emission current was found to be very stable with the property of long standing durability as a negligible amount of variation was observed when measured at a constant value of 5 mA for 3 hours. The experimental results signify many opportunities for potential applications of Ni doped Bi2Se3 as a source of electrons in scanning as well as transmission electron microscopy, flat panel displays and as an X-ray generator, etc.</style></abstract><issue><style face="normal" font="default" size="100%">27</style></issue><work-type><style face="normal" font="default" size="100%">Article</style></work-type><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">3.906</style></custom4></record></records></xml>