<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Gautam, Subodh K.</style></author><author><style face="normal" font="default" size="100%">Singh, Jitendra</style></author><author><style face="normal" font="default" size="100%">Shukla, D. K.</style></author><author><style face="normal" font="default" size="100%">Pippel, E.</style></author><author><style face="normal" font="default" size="100%">Poddar, P.</style></author><author><style face="normal" font="default" size="100%">Singh, Fouran</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Reversible phase transformation phenomenon in titanium dioxide films: evidence beyond interface-nucleation and dissolution-precipitation kinetics</style></title><secondary-title><style face="normal" font="default" size="100%">Acta Materialia</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Dissolution-precipitation kinetics</style></keyword><keyword><style  face="normal" font="default" size="100%">Interface-nucleation mechanism</style></keyword><keyword><style  face="normal" font="default" size="100%">Johnson-Mehl-Avrami-Kolmogorov (JMAK) approach</style></keyword><keyword><style  face="normal" font="default" size="100%">Reversible phase transformation</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2018</style></year><pub-dates><date><style  face="normal" font="default" size="100%">MAR</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">146</style></volume><pages><style face="normal" font="default" size="100%">253-264</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The re-crystallization kinetics and rutile to anatase reversible phase transformation (PT) in nano crystalline titanium dioxide (TiO2) are reported. Initially, an amorphous TiO2 film is used for the present study and in situ isothermal annealing dependent nucleation and growth kinetics of anatase and rutile phase is studied at low temperature (similar to 523 K) and well explained using Johnson Mehl AvramiKolmogorov (JMAK) model. The anatase nanocrystallite (NCs) transformation into rutile phase is reported with isothermal annealing for longer time and temperature dependent annealing in lower temperature range 523 K-673 K and explained using interface-nucleation mechanism. Furthermore, the thermodynamic stability of rutile NCs and lattice stress-induced reversible PT in nano-sized rutile TiO2 are confirmed in moderate temperature range (623 K- 973 K) and well explained using x-ray diffraction, micro-Raman spectroscopy and near edge x-ray absorption fine structure spectroscopy studies. However, annealing at higher temperature (1123 K- 1323 K) induces the growth of anatase NCs and their natural transform into rutile phase are explained by well-known dissolution precipitation mechanism. Activation energy of rutile PT is quantified and found higher for dissolution-precipitation mechanism than that for interface nucleation at earlier stage. Thus, overall PT kinetics at different temperature range is well understood by invoking in three step mechanism: 1) early stage anatase-to-rutile transformation is dominated by interface-nucleation, II) then intermediate stage reversible rutile-to-anatase PT and, Ill) at later stages, anatase-to-rutile PT is controlled by dissolution precipitation mechanism. (C) 2018 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.&lt;/p&gt;</style></abstract><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">5.301</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Gautam, Subodh Kumar</style></author><author><style face="normal" font="default" size="100%">Singh, Jitendra</style></author><author><style face="normal" font="default" size="100%">Singh, Ram Gopal</style></author><author><style face="normal" font="default" size="100%">Gautam, Naina</style></author><author><style face="normal" font="default" size="100%">Trivedi, Priyanka</style></author><author><style face="normal" font="default" size="100%">Singh, Fouran</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">In situ study of radiation stability and associated conduction mechanisms of Nb-Doped TiO2/p-Si heterojunction diode under swift heavy ion irradiation</style></title><secondary-title><style face="normal" font="default" size="100%">IEEE Transactions on Electron Devices</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Barrier height tuning</style></keyword><keyword><style  face="normal" font="default" size="100%">n-NTO/p-Si heterojunction</style></keyword><keyword><style  face="normal" font="default" size="100%">radiation stability of devices</style></keyword><keyword><style  face="normal" font="default" size="100%">secondary electron irradiation</style></keyword><keyword><style  face="normal" font="default" size="100%">space-charge limited current</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2019</style></year><pub-dates><date><style  face="normal" font="default" size="100%">MAR</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">66</style></volume><pages><style face="normal" font="default" size="100%">1475-1481</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;In situ current-voltage characteristics of Nb-doped TiO2/p-Si-based heterojunction diode have been studied under dense electronic excitations of 84-MeV Si6+ ions. The diode parameters such as ideality factor (eta), barrier height (phi(B)), reverse saturation current (J(s)), and series resistance (R-s) are found to be a strong function of ion irradiation fluence. The observed anomalies of fluence dependence of barrier height and ideality factor are explained in terms of irradiation-induced created defects complexes, modification of interface states and structural properties of Nbdoped-TiO2 (NTO) layer. Several mechanisms suchas barrier height inhomogeneity, donor defects-induced enchantment in n-NTO layer conductivity, and various current conduction mechanisms involved at different voltage ranges are discussed as a function of fluence with the help of constructed energy band diagram. Such in situ studies on n-NTO/p-Si heterojunction diode under radiation harsh environment are very appropriate for the better understanding of heterojunction interface properties and make it suitable for use in aerospace industry and nuclear reactors.&lt;/p&gt;
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