<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Biswas, Arindam</style></author><author><style face="normal" font="default" size="100%">Mitra, Anurag</style></author><author><style face="normal" font="default" size="100%">Sharma, Ashish</style></author><author><style face="normal" font="default" size="100%">Shinde, Dipak Dattatray</style></author><author><style face="normal" font="default" size="100%">Dambhare, V. Neha</style></author><author><style face="normal" font="default" size="100%">Sharma, Anjali</style></author><author><style face="normal" font="default" size="100%">Mahajan, Chandan</style></author><author><style face="normal" font="default" size="100%">Rath, Arup K.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Solution-phase ligand engineering for all-quantum-dot near-infrared light-emitting diodes</style></title><secondary-title><style face="normal" font="default" size="100%">ACS Applied Nano Materials</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">electroluminescence</style></keyword><keyword><style  face="normal" font="default" size="100%">lead sulfide</style></keyword><keyword><style  face="normal" font="default" size="100%">ligand passivation</style></keyword><keyword><style  face="normal" font="default" size="100%">light-emitting diodes</style></keyword><keyword><style  face="normal" font="default" size="100%">near-infrared</style></keyword><keyword><style  face="normal" font="default" size="100%">quantumdots</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2024</style></year><pub-dates><date><style  face="normal" font="default" size="100%">APR </style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">7</style></volume><pages><style face="normal" font="default" size="100%">9126-9135</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;
	Strong emission over a wide near-infrared (NIR) region makes lead sulfide quantum dots (QDs) a preferred material in building NIR light-emitting diodes (NIR-LEDs) for numerous applications. Narrow-bandgap emitter QDs blended in the matrix of high-band gap QDs offer a simple yet powerful architectural platform for building high-performance NIR-LEDs. So far, the all-QD-based blend architecture has been realized using a poorly controlled solid-state ligand exchange approach. Advanced solution-phase ligand exchange, which offers greater control over surface passivation, is yet to be realized in all-QD LED device construction. We observe that the solution-phase ligand exchange from the optimized lead halide and thiol ligand combination, used in high-performing QD solar cell construction, is inefficient in realizing efficient all-QD LEDs, which could have restricted the adoption of the solution-phase ligand exchange thus far. Here, we introduce an innovative dual-ligand strategy to build all-QD-based NIR-LEDs using an advanced solution-phase ligand exchange approach. Through ligand engineering of matrix QDs, we managed to improve photoluminescence quantum yield (40%), reduce trap density (10(14) cm(-3)), and prolong carrier lifetime (832 ns). The LED devices benefit from improved electronic properties and balanced carrier injection to yield 6% EQE and 7.7% PCE, which are six times higher than those of state-of-the-art ligands.&lt;/p&gt;
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	Foreign&lt;/p&gt;
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	5.9&lt;/p&gt;
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