<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Lakhe, Manorama G.</style></author><author><style face="normal" font="default" size="100%">Joshi, Padmshree</style></author><author><style face="normal" font="default" size="100%">Choudhary, Ram J.</style></author><author><style face="normal" font="default" size="100%">Ganesan, V.</style></author><author><style face="normal" font="default" size="100%">Joag, Dilip S.</style></author><author><style face="normal" font="default" size="100%">Chaure, Nandu B.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Electrochemically synthesized faceted CuInTe2 nanorods as an electron source for field emission applications</style></title><secondary-title><style face="normal" font="default" size="100%">New Journal of Chemistry</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year><pub-dates><date><style  face="normal" font="default" size="100%">APR</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">42</style></volume><pages><style face="normal" font="default" size="100%">5284-5294</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Herein, CuInTe2 (CIT) thin films with faceted nanorod-like morphology have been synthesized on a flexible molybdenum foil using a water-based low-cost electrodeposition technique. The co-deposition potential for CIT was optimized using cyclic voltammetry with respect to that of the Ag/AgCl reference electrode, and films were deposited from -0.6 V to -0.9 V at the working temperature of 75 degrees C. The as-prepared CIT films exhibited an amorphous nature, whereas the RTP-annealed films exhibited a highly crystalline chalcopyrite nature as a function of the growth potential. A red shift was observed in the Raman spectra of the as-deposited films that shifted towards the original position upon annealing. The Cu/In ratio obtained by the EDS analysis was found to decrease systematically upon increasing the growth potential. X-ray photoelectron spectroscopy (XPS) studies revealed the presence of Cu+, Cu2+ satellites, In3+, Te2-, and Te4+ states of Cu, In, and Te. The field emission study showed a maximum current density of 1.74 mA cm(-2), which was attainable at an applied electric field of 1.5 V mu m(-1). The turn-on field was found to be 0.92 V mu m(-1), comparable to that of the carbon nanofibres. The emitter exhibited stable electron emission over a period of 3 hours. The faceted CIT nanorods with columnar growth are a potential candidate for application as an electron source, and herein, the field emission of CIT nanorods is reported for the first time.</style></abstract><issue><style face="normal" font="default" size="100%">7</style></issue><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">3.269</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Lakhe, Manorama G.</style></author><author><style face="normal" font="default" size="100%">Chaure, Nandu B.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Transport properties of cuinte2 thin films obtained by the electrochemical route</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of electronic materials</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year><pub-dates><date><style  face="normal" font="default" size="100%">DEC</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%"> 47</style></volume><pages><style face="normal" font="default" size="100%">7099-7105</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">uInTe2 (CIT) thin films were potentiostatically electrodeposited onto cadmium sulfide thin films coated on fluorine doped tin oxide (FTO) glass in an aqueous bath at 75 degrees C by the standard three-electrode system at -0.7 V and -0.8 V, with respect to an Ag/AgCl reference electrode. The electrodeposited layers were heat treated at similar to 80 degrees C in air ambient for 60 min. X-ray diffraction pattern and Raman analysis confirmed the formation of chalcopyrite CIT thin films upon heat treatment. The optical band gap of heat treated CIT films was found to be similar to 1.0 eV and 0.95 eV deposited at -0.7 V and -0.8 V, respectively. Compact and good adhesive growth of CIT layers onto CdS coated FTO substrates is confirmed by field emission scanning electron microscopy. The current density-voltage (J-V) and capacitance-voltage (C-V) measurement was studied to understand the electronic quality of material for development of CIT layers for solar cell applications. The current density was found to be increased by two orders of magnitude upon low-temperature heat treatment. The capacitance-voltage measurement showed sharp depletion and accumulation region. The built in potential was found to be similar to 60 mV and 145 mV in the as-deposited samples, deposited at -0.7 V and -0.8 V, respectively, whereas upon heat treatment it shifted to 159 mV and 210 mV. The capacitance of the CIT films was found to be a function of applied bias and increased with increasing the bias voltage. The depletion width of the heat treated sample was found to be similar to 20 nm and 200 nm for the sample deposited at -0.7 V and -0.8 V, respectively. Thus, the sample deposited at -0.8 V shows optimum electronic properties and is found to be suitable for opto-electronic applications.</style></abstract><issue><style face="normal" font="default" size="100%">12</style></issue><work-type><style face="normal" font="default" size="100%">Article</style></work-type><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">1.566</style></custom4></record></records></xml>