<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Mahajan, Chandan</style></author><author><style face="normal" font="default" size="100%">Dambhare, Neha V.</style></author><author><style face="normal" font="default" size="100%">Biswas, Arindam</style></author><author><style face="normal" font="default" size="100%">Sharma, Anjali</style></author><author><style face="normal" font="default" size="100%">Shinde, Dipak Dattatray</style></author><author><style face="normal" font="default" size="100%">Rath, Arup K.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Multi-bandgap quantum dots ensemble for near-infrared photovoltaics</style></title><secondary-title><style face="normal" font="default" size="100%">Energy Technology</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">bulk-heterojunctions</style></keyword><keyword><style  face="normal" font="default" size="100%">multi-bandgap</style></keyword><keyword><style  face="normal" font="default" size="100%">near-infrared</style></keyword><keyword><style  face="normal" font="default" size="100%">quantum dots</style></keyword><keyword><style  face="normal" font="default" size="100%">solar cells</style></keyword><keyword><style  face="normal" font="default" size="100%">surface passivation</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2023</style></year><pub-dates><date><style  face="normal" font="default" size="100%">JUN</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">11</style></volume><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;
	Narrow bandgap quantum dots (QDs) are an important class of materials for near-infrared (NIR) optoelectronic devices owing to their size-tunable bandgap and chemical root processing. In photovoltaic applications, NIR QDs could be particularly useful to complement the sub-bandgap transmission loss of NIR solar radiation from perovskite and c-Si solar cells. However, insufficient carrier extraction thickness associated with the narrow NIR excitonic bandwidth of QDs limits the conversion efficacy of the broad NIR solar spectrum. Here, we utilize a multi-bandgap QD ensemble which widens the NIR absorption bandwidth to mimic the broad solar spectrum. A solution-phase ligand passivation strategy is used to control doping properties and energy level alignment of multi-bandgap QDs. We successfully developed bulk-heterojunction solar cells using the multi-bandgap QD ensemble, which yields higher carrier extraction thickness and broader NIR absorption. The gain from NIR absorption and carrier transport resulted in higher short-circuit current generation and power conversion efficiency (PCE) in solar cell devices. The champion device shows 8.73% PCE under 1.5 AM solar illumination and 7.44% and 5.05% PCE for the NIR photons transmitted from perovskite and c-Si layers.&lt;/p&gt;
</style></abstract><issue><style face="normal" font="default" size="100%">6</style></issue><work-type><style face="normal" font="default" size="100%">Article</style></work-type><custom3><style face="normal" font="default" size="100%">&lt;p&gt;
	Foreign&lt;/p&gt;
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	3.8&lt;/p&gt;
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