<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Pawbake, Amit S.</style></author><author><style face="normal" font="default" size="100%">Date, Abhijit</style></author><author><style face="normal" font="default" size="100%">Jadkar, Sandesh R.</style></author><author><style face="normal" font="default" size="100%">Late, Dattatray J.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Temperature dependent raman spectroscopy and sensing behavior of few layer SnSe2nanosheets</style></title><secondary-title><style face="normal" font="default" size="100%">Chemistryselect</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2016</style></year><pub-dates><date><style  face="normal" font="default" size="100%">OCT</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">1</style></volume><pages><style face="normal" font="default" size="100%">5380-5387</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Two- dimensional (2D) tin diselenide (SnSe2) nanosheets were synthesized using solvothermal route in one step and perform its humidity sensing, photo sensing and temperature dependant Raman spectroscopy studies. The sensor devices based on few layer SnSe2 nanosheets were prepared and which shows fast response as well as recovery time along with good long-term stability and high sensitivity. The photo sensing behavior shows the typical response time and recovery time to be similar to 310 ms and similar to 340 ms respectively for visible light illumination. The room temperature humidity sensing behaviors were studied in the range of 11-97% relative humidity (RH). The ob-served sensitivity of similar to 81% with response time of similar to 74 sec and recovery time of similar to 30 sec were calculated for the few layer SnSe2 nanosheets based humidity sensor. The humidity sensing results confirms the high stability of the device even after six months of time. The temperature dependent Raman spectroscopy investigation in the range of 80 K to 593 K were carried out which shows the negative temperature coefficient and softening of Raman modes as we increases the temperature. The softening modes of SnSe2 nanosheets due to temperature were explained on the basis of a double resonance process which is more active in an atomically thin sample.</style></abstract><issue><style face="normal" font="default" size="100%">16</style></issue><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">0.00</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Pawbake, Amit</style></author><author><style face="normal" font="default" size="100%">Waykar, Ravindra</style></author><author><style face="normal" font="default" size="100%">Jadhavar, Ashok</style></author><author><style face="normal" font="default" size="100%">Kulkarni, Rupali</style></author><author><style face="normal" font="default" size="100%">Waman, Vaishali</style></author><author><style face="normal" font="default" size="100%">Date, Abhijit</style></author><author><style face="normal" font="default" size="100%">Late, Dattatray J.</style></author><author><style face="normal" font="default" size="100%">Pathan, Habib</style></author><author><style face="normal" font="default" size="100%">Jadkar, Sandesh</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Wide band gap and conducting tungsten carbide(WC) thin films prepared by hot wire chemical vapor deposition(HW-CVD) method</style></title><secondary-title><style face="normal" font="default" size="100%">Materials Letters</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2016</style></year><pub-dates><date><style  face="normal" font="default" size="100%">NOV</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">183</style></volume><pages><style face="normal" font="default" size="100%">315-317</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;In this letter, we report synthesis of tungsten carbide (WC) thin films having wide band gap(3.22-3.3 eV) with high electrical conductivity (80-1260 S/cm) by HW-CVD using heated using heated W filament and Tetra-fluoro-methane (CF4) gas. Formation of WC was confirmed by low angle XRD, Raman spectroscopy and x-ray photoelectron spectroscopy. UV-Visible spectroscopy analysis revealed that the synthesized films have high transmission at wavelength 500 nm. Electrical properties measured using Hall measurement show that these films are semiconductor. The obtained results imply that the growth of WC thin films is mainly from the atomic species(W and C) evaporated from the hot filament. The HW-CVD opens a novel route to synthesize wide band gap and conducting WC at a cost-efficient way for DSSCs and hydrogen evolution reaction (HER). (C) 2016 Elsevier B. V. All rights reserved.&lt;/p&gt;</style></abstract><custom3><style face="normal" font="default" size="100%">&lt;p&gt;Foreign&lt;/p&gt;</style></custom3><custom4><style face="normal" font="default" size="100%">&lt;p&gt;2.437&lt;/p&gt;</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Jadkar, Vijaya</style></author><author><style face="normal" font="default" size="100%">Pawbake, Amit</style></author><author><style face="normal" font="default" size="100%">Waykar, Ravindra</style></author><author><style face="normal" font="default" size="100%">Jadhavar, Ashok</style></author><author><style face="normal" font="default" size="100%">Date, Abhijit</style></author><author><style face="normal" font="default" size="100%">Late, Dattatray</style></author><author><style face="normal" font="default" size="100%">Pathan, Habib</style></author><author><style face="normal" font="default" size="100%">Gosavi, Suresh</style></author><author><style face="normal" font="default" size="100%">Jadkar, Sandesh</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Synthesis of gamma-WO3 thin films by hot wire-CVD and investigation of its humidity sensing properties</style></title><secondary-title><style face="normal" font="default" size="100%">Physica Status Solidi A-Applications and Materials Science</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year><pub-dates><date><style  face="normal" font="default" size="100%">MAY</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">214</style></volume><pages><style face="normal" font="default" size="100%">Article Number: 1600717</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this study, monoclinic tungsten oxide (gamma-WO3) have been grown in a single step using HW-CVD method by resistively heating W filaments in a constant O-2 pressure. The formation of gamma-WO3 was confirmed using low angle-XRD and Raman spectroscopy analysis. Low angle-XRD analysis revealed that as-deposited WO3 film are highly crystalline and the crystallites have preferred orientation along the (002) direction. HRTEM analysis and SAED pattern also show the highly crystalline nature of WO3 with d spacing of similar to 0.38 nm, having an orientation along the (002) direction. Surface topography investigated by SEM analysis shows the formation of a uniform and homogeneous cauliflower like morphology throughout the substrate surface without flaws and cracks. A humidity sensing device incorporating WO3 is also fabricated, which shows a maximum humidity sensitivity factor of similar to 3954% along with a response time of similar to 14 s and a recovery time of similar to 25 s. The obtained results demonstrate that it is possible to synthesize WO3 in a single step by HW-CVD method and to fabricate a humidity sensor by using it. (C) 2017 WILEY-VCH Verlag GmbH &amp; Co. KGaA, Weinheim</style></abstract><issue><style face="normal" font="default" size="100%">5</style></issue><work-type><style face="normal" font="default" size="100%">Article</style></work-type><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">1.648</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Jadkar, Vijaya</style></author><author><style face="normal" font="default" size="100%">Pawbake, Amit S.</style></author><author><style face="normal" font="default" size="100%">Waykar,Ravindra G.</style></author><author><style face="normal" font="default" size="100%">Jadhavar, Ashok Arjun</style></author><author><style face="normal" font="default" size="100%">Mayabadi, Azam</style></author><author><style face="normal" font="default" size="100%">Date, Abhijit</style></author><author><style face="normal" font="default" size="100%">Late, Dattatray J.</style></author><author><style face="normal" font="default" size="100%">Pathan, Habib M.</style></author><author><style face="normal" font="default" size="100%">Gosavi, Suresh W.</style></author><author><style face="normal" font="default" size="100%">Jadkar, Sandesh R.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Synthesis of orthorhombic-molybdenum trioxide (α-MoO3) thin films by hot wire-CVD and investigations of its humidity sensing properties</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Materials Science Materials in Electronics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year><pub-dates><date><style  face="normal" font="default" size="100%">JUL</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">1</style></volume><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In present work, we report synthesis of orthorhombic-molybdenum trioxide (α-MoO 3) thin films using home-build hot wire-CVD (HW-CVD) method simply by heating the Mo filament in a controlled O 2 atmosphere. The formation of α-MoO 3 was confirmed by low angle-XRD and Raman spectroscopy. Low angle-XRD analysis revealed that α-MoO 3 crystallites have orientations along (110), (101) and (111) directions while Raman spectroscopy analysis shows two prominent vibrational modes ~819 and ~994 cm −1 associated with Mo 2–O and Mo=O respectively. SEM and TEM analysis show the formation of nano-sheets like morphology of α-MoO 3 thin films. The SAED pattern shows highly crystalline nature of α-MoO 3. The humidity-sensing properties were investigated at room temperature by fabricating the two probe device. The humidity sensing results showed n-type behavior of α-MoO 3. The maximum humidity sensitivity of ~6957% along with response time of ~66 s and recovery time of ~5 s were observed for α-MoO 3 thin film humidity sensor device. Our results have opened up a new avenue to grow α-MoO 3 for humidity sensor applications.</style></abstract><issue><style face="normal" font="default" size="100%">7</style></issue><work-type><style face="normal" font="default" size="100%">Article</style></work-type><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">1.798</style></custom4></record></records></xml>