<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Pawbake, Amit</style></author><author><style face="normal" font="default" size="100%">Waykar, Ravindra</style></author><author><style face="normal" font="default" size="100%">Jadhavar, Ashok</style></author><author><style face="normal" font="default" size="100%">Kulkarni, Rupali</style></author><author><style face="normal" font="default" size="100%">Waman, Vaishali</style></author><author><style face="normal" font="default" size="100%">Date, Abhijit</style></author><author><style face="normal" font="default" size="100%">Late, Dattatray J.</style></author><author><style face="normal" font="default" size="100%">Pathan, Habib</style></author><author><style face="normal" font="default" size="100%">Jadkar, Sandesh</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Wide band gap and conducting tungsten carbide(WC) thin films prepared by hot wire chemical vapor deposition(HW-CVD) method</style></title><secondary-title><style face="normal" font="default" size="100%">Materials Letters</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2016</style></year><pub-dates><date><style  face="normal" font="default" size="100%">NOV</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">183</style></volume><pages><style face="normal" font="default" size="100%">315-317</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;In this letter, we report synthesis of tungsten carbide (WC) thin films having wide band gap(3.22-3.3 eV) with high electrical conductivity (80-1260 S/cm) by HW-CVD using heated using heated W filament and Tetra-fluoro-methane (CF4) gas. Formation of WC was confirmed by low angle XRD, Raman spectroscopy and x-ray photoelectron spectroscopy. UV-Visible spectroscopy analysis revealed that the synthesized films have high transmission at wavelength 500 nm. Electrical properties measured using Hall measurement show that these films are semiconductor. The obtained results imply that the growth of WC thin films is mainly from the atomic species(W and C) evaporated from the hot filament. The HW-CVD opens a novel route to synthesize wide band gap and conducting WC at a cost-efficient way for DSSCs and hydrogen evolution reaction (HER). (C) 2016 Elsevier B. V. All rights reserved.&lt;/p&gt;</style></abstract><custom3><style face="normal" font="default" size="100%">&lt;p&gt;Foreign&lt;/p&gt;</style></custom3><custom4><style face="normal" font="default" size="100%">&lt;p&gt;2.437&lt;/p&gt;</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Jadkar, Vijaya</style></author><author><style face="normal" font="default" size="100%">Pawbake, Amit</style></author><author><style face="normal" font="default" size="100%">Waykar, Ravindra</style></author><author><style face="normal" font="default" size="100%">Jadhavar, Ashok</style></author><author><style face="normal" font="default" size="100%">Date, Abhijit</style></author><author><style face="normal" font="default" size="100%">Late, Dattatray</style></author><author><style face="normal" font="default" size="100%">Pathan, Habib</style></author><author><style face="normal" font="default" size="100%">Gosavi, Suresh</style></author><author><style face="normal" font="default" size="100%">Jadkar, Sandesh</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Synthesis of gamma-WO3 thin films by hot wire-CVD and investigation of its humidity sensing properties</style></title><secondary-title><style face="normal" font="default" size="100%">Physica Status Solidi A-Applications and Materials Science</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year><pub-dates><date><style  face="normal" font="default" size="100%">MAY</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">214</style></volume><pages><style face="normal" font="default" size="100%">Article Number: 1600717</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this study, monoclinic tungsten oxide (gamma-WO3) have been grown in a single step using HW-CVD method by resistively heating W filaments in a constant O-2 pressure. The formation of gamma-WO3 was confirmed using low angle-XRD and Raman spectroscopy analysis. Low angle-XRD analysis revealed that as-deposited WO3 film are highly crystalline and the crystallites have preferred orientation along the (002) direction. HRTEM analysis and SAED pattern also show the highly crystalline nature of WO3 with d spacing of similar to 0.38 nm, having an orientation along the (002) direction. Surface topography investigated by SEM analysis shows the formation of a uniform and homogeneous cauliflower like morphology throughout the substrate surface without flaws and cracks. A humidity sensing device incorporating WO3 is also fabricated, which shows a maximum humidity sensitivity factor of similar to 3954% along with a response time of similar to 14 s and a recovery time of similar to 25 s. The obtained results demonstrate that it is possible to synthesize WO3 in a single step by HW-CVD method and to fabricate a humidity sensor by using it. (C) 2017 WILEY-VCH Verlag GmbH &amp; Co. KGaA, Weinheim</style></abstract><issue><style face="normal" font="default" size="100%">5</style></issue><work-type><style face="normal" font="default" size="100%">Article</style></work-type><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">1.648</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Pandharkar, Subhash</style></author><author><style face="normal" font="default" size="100%">Rondiya, Sachin</style></author><author><style face="normal" font="default" size="100%">Bhorde, Ajinkya</style></author><author><style face="normal" font="default" size="100%">Nair, Shruthi</style></author><author><style face="normal" font="default" size="100%">Aher, Rahul</style></author><author><style face="normal" font="default" size="100%">Vairale, Priti</style></author><author><style face="normal" font="default" size="100%">Waghmare, Ashish</style></author><author><style face="normal" font="default" size="100%">Naik, Dhirsing</style></author><author><style face="normal" font="default" size="100%">Waykar, Ravindra</style></author><author><style face="normal" font="default" size="100%">Jadhav, Yogesh</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Probing the effect of selenium substitution in kesterite-Cu2ZnSnS4 nanocrystals prepared by hot injection method</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Materials Science-Materials in Electronics </style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2019</style></year><pub-dates><date><style  face="normal" font="default" size="100%">AUG</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">30</style></volume><pages><style face="normal" font="default" size="100%">14781-14790</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;&lt;span class=&quot;hitHilite&quot;&gt;In&lt;/span&gt; this paper, we report &lt;span class=&quot;hitHilite&quot;&gt;the&lt;/span&gt; &lt;span class=&quot;hitHilite&quot;&gt;effect&lt;/span&gt; &lt;span class=&quot;hitHilite&quot;&gt;of&lt;/span&gt; sulfur (S) &lt;span class=&quot;hitHilite&quot;&gt;substitution&lt;/span&gt; &lt;span class=&quot;hitHilite&quot;&gt;with&lt;/span&gt; &lt;span class=&quot;hitHilite&quot;&gt;selenium&lt;/span&gt; (Se) &lt;span class=&quot;hitHilite&quot;&gt;in&lt;/span&gt; CZTS &lt;span class=&quot;hitHilite&quot;&gt;nanocrystals&lt;/span&gt; &lt;span class=&quot;hitHilite&quot;&gt;prepared&lt;/span&gt; &lt;span class=&quot;hitHilite&quot;&gt;by&lt;/span&gt; &lt;span class=&quot;hitHilite&quot;&gt;hot&lt;/span&gt; &lt;span class=&quot;hitHilite&quot;&gt;injection&lt;/span&gt; &lt;span class=&quot;hitHilite&quot;&gt;method&lt;/span&gt;. &lt;span class=&quot;hitHilite&quot;&gt;The&lt;/span&gt; formation &lt;span class=&quot;hitHilite&quot;&gt;of&lt;/span&gt; kesterite-&lt;span class=&quot;hitHilite&quot;&gt;copper&lt;/span&gt; zinc tin sulfide (Cu2ZnSnS4, CZTS) and &lt;span class=&quot;hitHilite&quot;&gt;copper&lt;/span&gt; zinc tin selenide (Cu2ZnSnSe4, CZTSe) &lt;span class=&quot;hitHilite&quot;&gt;nanocrystals&lt;/span&gt; is confirmed &lt;span class=&quot;hitHilite&quot;&gt;by&lt;/span&gt; X-ray diffraction (XRD), Raman spectroscopy and transmission electron microscopy (TEM) analysis. &lt;span class=&quot;hitHilite&quot;&gt;The&lt;/span&gt; XRD, TEM and atomic force microscopy (AFM) analysis shows an overall increase &lt;span class=&quot;hitHilite&quot;&gt;in&lt;/span&gt; average crystallite size upon Se &lt;span class=&quot;hitHilite&quot;&gt;substitution&lt;/span&gt;. AFM images revealed an increase &lt;span class=&quot;hitHilite&quot;&gt;in&lt;/span&gt; root mean square surface roughness (S-q) and average surface roughness (S-&lt;span class=&quot;hitHilite&quot;&gt;a&lt;/span&gt;) when S &lt;span class=&quot;hitHilite&quot;&gt;in&lt;/span&gt; CZTS is replaced &lt;span class=&quot;hitHilite&quot;&gt;by&lt;/span&gt; Se. &lt;span class=&quot;hitHilite&quot;&gt;The&lt;/span&gt; &lt;span class=&quot;hitHilite&quot;&gt;substitution&lt;/span&gt; &lt;span class=&quot;hitHilite&quot;&gt;of&lt;/span&gt; S &lt;span class=&quot;hitHilite&quot;&gt;by&lt;/span&gt; Se &lt;span class=&quot;hitHilite&quot;&gt;in&lt;/span&gt; host CZTS narrows &lt;span class=&quot;hitHilite&quot;&gt;the&lt;/span&gt; optical band gap from 1.56 to 1.03 eV. &lt;span class=&quot;hitHilite&quot;&gt;The&lt;/span&gt; ultraviolet photoelectron spectroscopy (UPS) analysis shows shift &lt;span class=&quot;hitHilite&quot;&gt;in&lt;/span&gt; valence band and conduction band edge &lt;span class=&quot;hitHilite&quot;&gt;in&lt;/span&gt; CZTSe compared to CZTS. &lt;span class=&quot;hitHilite&quot;&gt;The&lt;/span&gt; photocurrent density measurement &lt;span class=&quot;hitHilite&quot;&gt;in&lt;/span&gt; synthesized CZTSe thin films is similar to 4 to 5 times higher than CZTS thin films. &lt;span class=&quot;hitHilite&quot;&gt;The&lt;/span&gt; obtained results show that CZTSe can be &lt;span class=&quot;hitHilite&quot;&gt;a&lt;/span&gt; promising candidate as absorber material &lt;span class=&quot;hitHilite&quot;&gt;in&lt;/span&gt; photovoltaic applications.&lt;/p&gt;
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