<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Suryawanshi, Sachin R.</style></author><author><style face="normal" font="default" size="100%">Mistari, Chetan D.</style></author><author><style face="normal" font="default" size="100%">Singh, Anil K.</style></author><author><style face="normal" font="default" size="100%">Phase, Deodatta M.</style></author><author><style face="normal" font="default" size="100%">Late, Dattatray J.</style></author><author><style face="normal" font="default" size="100%">Sinha, Sucharita</style></author><author><style face="normal" font="default" size="100%">More, Mahendra A.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Facile approach towards fabrication of GdB6-ZnO heteroarchitecture as high currentdensity cold cathode</style></title><secondary-title><style face="normal" font="default" size="100%">Chemistryselect</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2016</style></year><pub-dates><date><style  face="normal" font="default" size="100%">AUG</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">1</style></volume><pages><style face="normal" font="default" size="100%">3723-3729</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Three dimensional (3D) GdB6-ZnO heteroarchitecture comprised of thin coating of GdB6 on self aligned ZnO urchins with pointed apex has been synthesized employing optimized Pulsed Laser Deposition (PLD) technique. The self aligned ZnO urchins on Zn substrate were obtained using hydrothermal route. The as-synthesized GdB6-ZnO heteroarchitecture was characterized using XRD, SEM, TEM XPS, and UPS in order to reveal its structural, morphological, chemical, and electronic properties. Interestingly, the GdB6-ZnO heteroarchitecture exhibits superior field emission (FE) behviour in contrast to the pristine ZnO urchins envisaged by extraction of very high emission current density of similar to 4.6 mA/cm(2) at an applied field of similar to 4.5 V/mm, against similar to 1.5 mA/cm(2) at an applied field of similar to 5.6 V/mm from the pristine ZnO urchins emitter. Furthermore, the GdB6-ZnOemitter exhibits good emission stability at pre-set value of similar to 5 mA over duration of more than 3 hours. The superior FE behaviour of the GdB6-ZnO is attributed to low work-function of GdB6 and presence of nanometric protrusions on the emitter surface, further enhancing the aspect ratio provided by the ZnO urchins. The present results demonstrate a facile approach towards fabrication of high current density cold cathodes due to rare earth hexaborides via designing hetero-architectures comprised of their well adherent ultrathin coating on high aspect ratio metal oxide nanostructures.</style></abstract><issue><style face="normal" font="default" size="100%">13</style></issue><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">0.00</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Shisode, Raju T.</style></author><author><style face="normal" font="default" size="100%">Suryawanshi, Sachin R.</style></author><author><style face="normal" font="default" size="100%">Mistari, Chetan D.</style></author><author><style face="normal" font="default" size="100%">Late, Dattatray J.</style></author><author><style face="normal" font="default" size="100%">More, Mahendra A.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Enhanced field emission characteristics of a 3D hierarchical Hfo2-Zno heteroarchitecture</style></title><secondary-title><style face="normal" font="default" size="100%">ChemistrySelect</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">3D heteroarchitecture</style></keyword><keyword><style  face="normal" font="default" size="100%">Field Emission (FE)</style></keyword><keyword><style  face="normal" font="default" size="100%">hydrothermal</style></keyword><keyword><style  face="normal" font="default" size="100%">PLD</style></keyword><keyword><style  face="normal" font="default" size="100%">TEM</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2017</style></year><pub-dates><date><style  face="normal" font="default" size="100%">MAR</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">2</style></volume><pages><style face="normal" font="default" size="100%">2305-2310</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Three dimensional (3D) HfO2-ZnO heteroarchitecture comprised of thin coating of HfO2 on self assembled 3D ZnO urchins with pointed apex has been synthesized using hydrothermal route followed by Pulsed Laser Deposition (PLD). The as-synthesized HfO2-ZnO heteroarchitecture was characterized using XRD, SEM, EDS, and (HR) TEM, in order to reveal its structural, morphological, and chemical properties. The HfO2-ZnO heteroarchitecture emitter exhibits superior field emission (FE) behaviour in contrast to the pristine ZnO urchins, demonstrated by delivery of high emission current density of similar to 885 mA/cm2 at an applied field of similar to 3.35 V/mm, against similar to 383 mA/cm(2) at an applied field of similar to 4.32 V/mu m for the pristine ZnO urchins emitter. Interestingly, the HfO2-ZnO heteroarchitecture emitter exhibits excellent emission current stability characterized with fewer fluctuations, owing to very good ion-bombardment resistance offered by the HfO2 coating. Furthermore, the heteroarchitecture thus obtained facilitates tailoring of the morphology with high aspect ratio and modulation of electronic properties as well, thereby enhancing the FE behaviour. Despite HfO2 being wide band gap and high-k material, the HfO2-ZnO heteroarchitecture exhibits potential as promising candidate for fabrication of high current density cold cathode&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">7</style></issue><work-type><style face="normal" font="default" size="100%">Article</style></work-type><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">1.505</style></custom4></record></records></xml>