<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Bogle, Kashinath A.</style></author><author><style face="normal" font="default" size="100%">Bachhav, Mukesh N.</style></author><author><style face="normal" font="default" size="100%">Deo, Meenal S.</style></author><author><style face="normal" font="default" size="100%">Valanoor, Nagarajan</style></author><author><style face="normal" font="default" size="100%">Ogale, Satishchandra B.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Enhanced nonvolatile resistive switching in dilutely cobalt doped TiO2</style></title><secondary-title><style face="normal" font="default" size="100%">Applied Physics Letters</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">cobalt</style></keyword><keyword><style  face="normal" font="default" size="100%">Doping</style></keyword><keyword><style  face="normal" font="default" size="100%">magnetic switching</style></keyword><keyword><style  face="normal" font="default" size="100%">random-access storage</style></keyword><keyword><style  face="normal" font="default" size="100%">titanium compounds</style></keyword><keyword><style  face="normal" font="default" size="100%">vacancies (crystal)</style></keyword><keyword><style  face="normal" font="default" size="100%">valency</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2009</style></year><pub-dates><date><style  face="normal" font="default" size="100%">NOV</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">20</style></number><publisher><style face="normal" font="default" size="100%">AMER INST PHYSICS</style></publisher><pub-location><style face="normal" font="default" size="100%">CIRCULATION &amp; FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA</style></pub-location><volume><style face="normal" font="default" size="100%">95</style></volume><pages><style face="normal" font="default" size="100%">203502</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Incorporation of dilute concentration of dopant having a valence state different than that of the host cation enables controlled incorporation proximity vacancy defects for local charge balance. Since nonvolatile resistive switching is a phenomenon tied to such defects, it can be expected to be influenced by dilute doping. In this work, we demonstrate that enhanced nonvolatile resistive switching is realized in dilutely cobalt doped TiO2 films grown at room temperature. We provide essential characterizations and analyses. We suggest that the oxygen vacancies in the proximity of immobile dopants provide well distributed anchors for the development of systematic filamentary tracks.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">20</style></issue><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">3.820</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Bachhav, Mukesh N.</style></author><author><style face="normal" font="default" size="100%">Danoix, R.</style></author><author><style face="normal" font="default" size="100%">Vurpillot, F.</style></author><author><style face="normal" font="default" size="100%">Hannoyer, Beatrice</style></author><author><style face="normal" font="default" size="100%">Ogale, Satishchandra B.</style></author><author><style face="normal" font="default" size="100%">Danoix, F.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Evidence of lateral heat transfer during laser assisted atom probe tomography analysis of large band gap materials</style></title><secondary-title><style face="normal" font="default" size="100%">Applied Physics Letters</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2011</style></year><pub-dates><date><style  face="normal" font="default" size="100%">AUG</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">8</style></number><publisher><style face="normal" font="default" size="100%">AMER INST PHYSICS</style></publisher><pub-location><style face="normal" font="default" size="100%">CIRCULATION &amp; FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA</style></pub-location><volume><style face="normal" font="default" size="100%">99</style></volume><pages><style face="normal" font="default" size="100%">Article No. 084101</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Investigation of wustite (FeO), iron (Fe), and silicon (Si) specimens by infrared laser assisted three dimensional atom probe tomography shows evidence of confined surface absorption of the laser energy as the mechanism of laser assisted field evaporation for high band gap materials. The absorption region is shown to be located on the laser illumination side, close to the specimen apex. A simple model based on thermal diffusivity and spatial extent of the absorption region is derived and applied to the experimental results. The values of thermal diffusivity thus obtained are in good agreement with the published data. (C) 2011 American Institute of Physics. [doi:10.1063/1.3622647]&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">8</style></issue><work-type><style face="normal" font="default" size="100%">Article</style></work-type><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">4.12</style></custom4></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Bachhav, Mukesh N.</style></author><author><style face="normal" font="default" size="100%">Danoix, R.</style></author><author><style face="normal" font="default" size="100%">Danoix, F.</style></author><author><style face="normal" font="default" size="100%">Hannoyer, Beatrice</style></author><author><style face="normal" font="default" size="100%">Ogale, Satishchandra B.</style></author><author><style face="normal" font="default" size="100%">Vurpillot, F.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Investigation of wustite (Fe1-xO) by femtosecond laser assisted atom probe tomography</style></title><secondary-title><style face="normal" font="default" size="100%">Ultramicroscopy</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Atom probe tomography</style></keyword><keyword><style  face="normal" font="default" size="100%">Laser assisted field evaporation</style></keyword><keyword><style  face="normal" font="default" size="100%">Wustite</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2011</style></year><pub-dates><date><style  face="normal" font="default" size="100%">MAY</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">6</style></number><publisher><style face="normal" font="default" size="100%">ELSEVIER SCIENCE BV</style></publisher><pub-location><style face="normal" font="default" size="100%">PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS</style></pub-location><volume><style face="normal" font="default" size="100%">111</style></volume><pages><style face="normal" font="default" size="100%">584-588</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;In this paper, we report results obtained from laser assisted three-dimensional (3-D) atom probe tomography (APT) on wustite (Fe1-xO). Oxides are generally insulating and hence hard to analyse in conventional electrical assisted APT. To overcome this problem, femtosecond laser pulses are used instead of voltage pulses. Here we discuss some aspects of pulsed laser field evaporation and optimization of parameters to achieve better chemical accuracy. (C) 2010 Elsevier B.V. All rights reserved.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">6</style></issue><work-type><style face="normal" font="default" size="100%">Article</style></work-type><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">2.72</style></custom4></record></records></xml>