<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Gautam, Subodh Kumar</style></author><author><style face="normal" font="default" size="100%">Singh, Jitendra</style></author><author><style face="normal" font="default" size="100%">Singh, Ram Gopal</style></author><author><style face="normal" font="default" size="100%">Gautam, Naina</style></author><author><style face="normal" font="default" size="100%">Trivedi, Priyanka</style></author><author><style face="normal" font="default" size="100%">Singh, Fouran</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">In situ study of radiation stability and associated conduction mechanisms of Nb-Doped TiO2/p-Si heterojunction diode under swift heavy ion irradiation</style></title><secondary-title><style face="normal" font="default" size="100%">IEEE Transactions on Electron Devices</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Barrier height tuning</style></keyword><keyword><style  face="normal" font="default" size="100%">n-NTO/p-Si heterojunction</style></keyword><keyword><style  face="normal" font="default" size="100%">radiation stability of devices</style></keyword><keyword><style  face="normal" font="default" size="100%">secondary electron irradiation</style></keyword><keyword><style  face="normal" font="default" size="100%">space-charge limited current</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2019</style></year><pub-dates><date><style  face="normal" font="default" size="100%">MAR</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">66</style></volume><pages><style face="normal" font="default" size="100%">1475-1481</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;In situ current-voltage characteristics of Nb-doped TiO2/p-Si-based heterojunction diode have been studied under dense electronic excitations of 84-MeV Si6+ ions. The diode parameters such as ideality factor (eta), barrier height (phi(B)), reverse saturation current (J(s)), and series resistance (R-s) are found to be a strong function of ion irradiation fluence. The observed anomalies of fluence dependence of barrier height and ideality factor are explained in terms of irradiation-induced created defects complexes, modification of interface states and structural properties of Nbdoped-TiO2 (NTO) layer. Several mechanisms suchas barrier height inhomogeneity, donor defects-induced enchantment in n-NTO layer conductivity, and various current conduction mechanisms involved at different voltage ranges are discussed as a function of fluence with the help of constructed energy band diagram. Such in situ studies on n-NTO/p-Si heterojunction diode under radiation harsh environment are very appropriate for the better understanding of heterojunction interface properties and make it suitable for use in aerospace industry and nuclear reactors.&lt;/p&gt;
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