<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Gutierrez-Naranjo, David</style></author><author><style face="normal" font="default" size="100%">Holguin-Momaca, Jose T.</style></author><author><style face="normal" font="default" size="100%">Solis-Canto, Oscar O.</style></author><author><style face="normal" font="default" size="100%">Gupta, Preeti</style></author><author><style face="normal" font="default" size="100%">Poddar, Pankaj</style></author><author><style face="normal" font="default" size="100%">Espinosa Magana, Francisco</style></author><author><style face="normal" font="default" size="100%">Olive-Mendez, Sion F.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Polycrystalline MnGe2 thin films on InAs(001) substrates</style></title><secondary-title><style face="normal" font="default" size="100%">Thin Solid Films</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year><pub-dates><date><style  face="normal" font="default" size="100%">JUL</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">657</style></volume><pages><style face="normal" font="default" size="100%">38-41</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">We report on the growth of MnGe2 thin films on InAs(001) substrates using radio frequency-magnetron cosputtering. Polycrystalline thin films were obtained at a substrate temperature of 353 K. X-ray diffractometry was used to identify the tetragonal MnGe2 phase (space group 14/mcm). Measurements of the magnetic field and temperature dependence of the magnetization revealed that the MnGe2 thin films are ferromagnetic with a magnetization of 280 kAm(-1) and a Curie temperature of 62 K. Additionally, an antiferromagnetic component is observed at low temperatures, which may arise atomic disorder at the grain boundaries between MnGe2 crystallites.</style></abstract><work-type><style face="normal" font="default" size="100%">Article</style></work-type><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">1.879</style></custom4></record></records></xml>