<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Dubey, Anjani</style></author><author><style face="normal" font="default" size="100%">Kolekar, Sadhu K.</style></author><author><style face="normal" font="default" size="100%">Gopinath, Chinnakonda S.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">C-H activation of methane to formaldehyde on Ce1-xZrxO2 thin films: a step to bridge the material gap</style></title><secondary-title><style face="normal" font="default" size="100%">ChemCatChem</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2016</style></year><pub-dates><date><style  face="normal" font="default" size="100%">DEC</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">8</style></volume><pages><style face="normal" font="default" size="100%">3650–3656</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Ce1−xZrxO2 (CZ) thin films were prepared by a combination of sol–gel and spin-coating methods and were evaluated for the C−H activation of methane by using a molecular beam set-up with the aim to bridge the material gap. The C−H activation of methane begins at 950 K, and a Ce-rich CZ composition displays a high selectivity (4–12 %) to the partially oxidised product, formaldehyde. A 10–12 % selectivity towards HCHO with 1.6 % methane conversion was observed with methane-rich CH4/O2 reactant compositions at 1050 K. Short contact times, prevalent under molecular beam conditions, could be a possible reason for HCHO formation. Although combustion products were observed instantly upon shining the mixture of reactants on CZ surfaces, up to 20 s delay was observed before formaldehyde generation, which indicates that the oxygen vacancy migration contributes to the rate-determining step and the diffusion-controlled nature of the reaction. A burst in HCHO generation at the point of molecular beam opening, after beam-closed conditions, suggests that the diffusion of oxygen vacancies to the surface is the reason for HCHO formation. Kinetics results also indicate the necessity of reduction sites for HCHO generation.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">23</style></issue><work-type><style face="normal" font="default" size="100%">Article</style></work-type><custom2><style face="normal" font="default" size="100%">&lt;p&gt;Council of Scientific &amp;amp; Industrial Research (CSIR) - India&lt;/p&gt;</style></custom2><custom3><style face="normal" font="default" size="100%">&lt;p&gt;Foreign&lt;/p&gt;</style></custom3><custom4><style face="normal" font="default" size="100%">4.724</style></custom4></record></records></xml>