<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Bogle, Kashinath A.</style></author><author><style face="normal" font="default" size="100%">Bachhav, Mukesh N.</style></author><author><style face="normal" font="default" size="100%">Deo, Meenal S.</style></author><author><style face="normal" font="default" size="100%">Valanoor, Nagarajan</style></author><author><style face="normal" font="default" size="100%">Ogale, Satishchandra B.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Enhanced nonvolatile resistive switching in dilutely cobalt doped TiO2</style></title><secondary-title><style face="normal" font="default" size="100%">Applied Physics Letters</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">cobalt</style></keyword><keyword><style  face="normal" font="default" size="100%">Doping</style></keyword><keyword><style  face="normal" font="default" size="100%">magnetic switching</style></keyword><keyword><style  face="normal" font="default" size="100%">random-access storage</style></keyword><keyword><style  face="normal" font="default" size="100%">titanium compounds</style></keyword><keyword><style  face="normal" font="default" size="100%">vacancies (crystal)</style></keyword><keyword><style  face="normal" font="default" size="100%">valency</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2009</style></year><pub-dates><date><style  face="normal" font="default" size="100%">NOV</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">20</style></number><publisher><style face="normal" font="default" size="100%">AMER INST PHYSICS</style></publisher><pub-location><style face="normal" font="default" size="100%">CIRCULATION &amp; FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA</style></pub-location><volume><style face="normal" font="default" size="100%">95</style></volume><pages><style face="normal" font="default" size="100%">203502</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Incorporation of dilute concentration of dopant having a valence state different than that of the host cation enables controlled incorporation proximity vacancy defects for local charge balance. Since nonvolatile resistive switching is a phenomenon tied to such defects, it can be expected to be influenced by dilute doping. In this work, we demonstrate that enhanced nonvolatile resistive switching is realized in dilutely cobalt doped TiO2 films grown at room temperature. We provide essential characterizations and analyses. We suggest that the oxygen vacancies in the proximity of immobile dopants provide well distributed anchors for the development of systematic filamentary tracks.&lt;/p&gt;</style></abstract><issue><style face="normal" font="default" size="100%">20</style></issue><custom3><style face="normal" font="default" size="100%">Foreign</style></custom3><custom4><style face="normal" font="default" size="100%">3.820</style></custom4></record></records></xml>