02068nas a2200301 4500008004100000022001100041245008100052210006900133260000800202300001200210490000800222520116200230653002101392653001701413653003001430653001901460653002401479653001801503100001401521700001501535700001901550700001701569700001701586700001801603700001901621700001701640856010901657 2019 eng d a22369700aVSe2-reduced graphene oxide as efficient cathode material for field emission0 aVSe2reduced graphene oxide as efficient cathode material for fie cMAY a384-3900 v1283 a

Field emission properties of pristine VSe2 and its hybrid with reduced graphene oxide (RGO) have been investigated in detail. Promising field emission performance were noted with lower values of turn-on and threshold fields of ∼1.3 V μm−1 and 2.12 V μm−1 respectively for the VSe2/RGO hybrid which is much more superior than that of pristine VSe2 emitter and other 2D materials. Density Functional Theory (DFT) simulations have also been performed to qualitatively support our experimental observations through demonstration of Density of States and computation of work function for pristine VSe2 and hybrid VSe2/RGO. The lowering of work function and appearance of additional states near Fermi level from carbon p orbital of RGO is responsible for superior field emission characteristics in hybrid VSe2/RGO compared to pristine VSe2 which supports our experimental observations. Our experimental data and theoretical insight from electronic structure simulations strongly infer that the synthesized hybrid VSe2/RGO has the potential to be tailored as efficient and high performance cathode material in field emission based devices.

10acathode material10aChalcogenide10aDensity functional theory10afield emission10aVanadium diselenide10aWork function1 aRatha, S.1 aBankar, P.1 aGangan, A., S.1 aMore, M., A.1 aLate, D., J.1 aBehra, J., N.1 aChkraborty, B.1 aRout, C., S. uhttps://library.ncl.res.in/content/vse2-reduced-graphene-oxide-efficient-cathode-material-field-emission02754nas a2200253 4500008004100000022001400041245014800055210006900203260000800272300001400280490000700294520185500301653002802156653001902184653003102203653000902234653001802243100002302261700001702284700001702301700002602318700003002344856012602374 2022 eng d a2168-048500aSustainable CO2 reduction on in (2)O(3 )with exclusive CO selectivity: catalysis and in situ valence band photoelectron spectral investigations0 aSustainable CO2 reduction on in 2O3 with exclusive CO selectivit cMAR a3521-35310 v103 a

This study demonstrates a sustainable catalytic CO2 conversion to near 100% CO selectivity at ambient pressure on In2O3. Critically, high CO yield could be observed at the cost of undesired methanation, using a lower than stoichiometric amount of hydrogen in the feed; 1:1 and 1:0.67 CO2:H-2 ratios exhibit 98-99.6% CO selectivity with 25-38% CO2 conversion between 773 and 873 K. CO2 and H-2 conversion under steady-state conditions at 773-873 K suggests a 1:1 ratio of adsorbed reactants (with 1:0.67 CO2:H-2 feed) on the catalyst surface, underscoring the presence of an ideal reactant composition for the reverse water-gas shift reaction, while H-2-rich feed compositions show the H-2-dominated surface. Surface electronic structure changes, under near-operating conditions, were explored with near ambient pressure photoelectron spectroscopy (NAPPES), and the interesting findings are as follows: (a) A shift in the valence band to lower binding energy, up to 0.6 eV, was observed because of electron filling at high temperatures. (b) An observation of heterogeneous nature of the catalyst surface under NAPPES measurement conditions is attributed to the generation of active oxygen vacancy (O-v) sites, which in turn changes the work function of In2O3. (c) The above changes are found to be reversible, when the reaction was stopped. Vibrational features of the reactant molecules were observed to be broadened in the active temperature window of the catalyst supporting the heterogeneous character of the catalyst surface because of dynamic O-v generation. By optimizing gas hourly space velocity, CO2:H-2 ratio, and reaction temperature, exclusive CO selectivity is possible with a H-2:CO2 ratio of similar to 0.67, which will avoid the product separation stage altogether, while minimizing the expensive H-2 in the reactant feed.

10aheterogeneous catalysis10aOxygen vacancy10aphotoelectron spectroscopy10aRWGS10aWork function1 aMhamane, Nitin, B.1 aChetry, Sibo1 aRanjan, Ravi1 aRaja, Thirumalaiswamy1 aGopinath, Chinnakonda, S. uhttps://library.ncl.res.in/content/sustainable-co2-reduction-2o3-exclusive-co-selectivity-catalysis-and-situ-valence-band01866nas a2200253 4500008004100000022001400041245011600055210006900171260000800240300001100248490000800259520101600267653003201283653001801315653001401333653001801347653003701365653001501402100001501417700001901432700001801451700001801469856012501487 2022 eng d a0040-609000aTuning of work function of ZnO by doping and co-doping: an investigation using X-ray photoelectron spectroscopy0 aTuning of work function of ZnO by doping and codoping an investi cNOV a1395380 v7613 a

The shift in the work function of the ZnO thin film upon varying codoping ratio has been investigated by X-ray photoelectron spectroscopy. A notable shift of 0.2 eV in the work function was achieved in the films when the Al: In doping ratio was changed from 0:10 to 10:0. The elemental composition of the dopants obtained from XPS analysis showed the presence of more amount of In dopant than Al in codoped ZnO films. In this way a clear understanding of the variation in electrical properties on dopant ratio is obtained. A decrease in work function was also observed with the increase in free carrier concentration when the codopant ratio is changed. The effects of Burstein moss, band narrowing, and band renormalization observed in the bandgap were explained by an upward and downward shift of valence band maxima of the corresponding thin films. The controllable work function of the codoped ZnO films by varying the doping ratio offers excellent potential advantages in optoelectronic devices.

10aIndium -Aluminum co -doping10aSpray coating10athin film10aWork function10aX-ray photoelectron spectroscopy10aZinc oxide1 aSoumya, K.1 aSelvam, Packia1 aVinod, C., P.1 aPotty, S., N. uhttps://library.ncl.res.in/content/tuning-work-function-zno-doping-and-co-doping-investigation-using-x-ray-photoelectron02515nas a2200313 4500008004100000245012200041210006900163260000800232300001400240490000600254520147300260653003801733653001901771653001801790653002001808653001801828100002501846700001601871700002501887700001601912700001601928700002401944700002301968700001701991700002702008700001702035700002602052856012302078 2026 eng d00aField emission performance of 2D Ti2CT x (T x = O2, F2, O-F) MXene: experimental insights and theoretical endorsement0 aField emission performance of 2D Ti2CT x T x O2 F2 OF MXene expe cAPR a6775-67870 v93 a

Field emission (FE) is an important electron emission mechanism for vacuum microelectronic devices; however, conventional emitters often exhibit high turn-on fields, limited emission stability, and degradation during prolonged operation. Two-dimensional MXenes have recently emerged as promising FE materials due to their remarkable electrical conductivity, comparatively low work function, and tunnelable surface terminations. Nevertheless, most studies have focused on Ti3C2T x MXene, while other compositions such as Ti2CT x remain largely unexplored, particularly regarding the influence of surface terminal groups on their electronic and emission properties. Herein, Ti2CT x (T x = -F2, -O2, -OF) MXene was synthesized via selective chemical etching of the Ti2AlC MAX phase and investigated for its FE characteristics. The material exhibits a polycrystalline hexagonal layered structure with a high specific surface area of 349.02 m2 g-1. Ti2CT x MXene demonstrates excellent FE performance with a low turn-on field of 1.56 V mu m-1 and a threshold field of 2.0 V mu m-1 (at 10 mu A cm-2), along with a stable emission for 4 h. Density functional theory calculations further reveal that surface terminations strongly influence the electronic structure and work function, with the experimental value of 4.66 eV closely matching the -F2 termination. These results highlight Ti2CT x MXene as a promising material for stable and efficient FE applications.

10a2D Ti2CT x MXene10afield emission10aTDOS and PDOS10aTurn-on voltage10aWork function1 aKakade, Prashant, M.1 aAher, Rahul1 aKachere, Avinash, R.1 aCho, Jinill1 aDeore, Amol1 aJadkar, Sandesh, R.1 aChauhan, Inderjeet1 aKim, Taesung1 aMandlik, Nandkumar, T.1 aKim, Ji, Man1 aBulakhe, Ravindra, N. uhttps://library.ncl.res.in/content/field-emission-performance-2d-ti2ct-x-t-x-o2-f2-o-f-mxene-experimental-insights-and